TLP290(SE
TOSHIBA Photocoupler
GaAs Ired & Photo-Transistor
TLP290(SE
Programmable Controllers
AC/DC-Input Module
Hybrid ICs
TLP290(SE consist of photo transistor, optically coupled to two gallium
arsenide infrared emitting diode connected inverse parallel, and can operate
directly by AC input current.
The TLP290(SE is housed in the very small and thin SO4 package.
Since TLP290(SE are guaranteed wide operating temperature (Ta=-55 to 110
˚C) and high isolation voltage (3750Vrms), it’s suitable for high-density
surface mounting applications such as programmable controllers and hybrid
ICs.
Collector-Emitter voltage : 80 V (min)
Current transfer ratio
Rank GB
Isolation voltage
UL recognized
cUL approved
SEMKO conformity
BSI conformity
VDE conformity
: 50% (min)
: 100% (min)
: 3750 Vrms (min)
: UL1577, File No. E67349
: CSA Component Acceptance Service No.5A,
File No. E67349
: EN 60065: 2002,
EN 60950-1: 2001, EN 60335-1: 2002,
: BS EN 60065: 2002, BS EN 60950-1: 2006,
: EN 60747-5-5
1: Anode
Cathode
2: Cathode
Anode
3: Emitter
4: Collector
2
3
1
Unit: mm
TOSHIBA
11-3C1
Weight: 0.05 g (typ.)
Guaranteed performance over -55 to 110 ˚C
Pin Configuration
TLP290
4
Construction Mechanical Rating
Creepage distance: 5.0 mm (min)
Clearance: 5.0 mm (min)
Insulation thickness: 0.4 mm (min)
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TLP290(SE
Current Transfer Ratio (Unless otherwise specified, Ta = 25°C)
Classification
(Note1)
Current Transfer Ration (%)
(I
C
/ I
F
)
I
F
= 5 mA, V
CE
= 5 V, Ta = 25°C
Min
Blank
Rank Y
TLP290
Rank GR
Rank GB
Rank BL
50
50
100
100
200
Max
600
150
300
600
600
Blank, YE, GR, BL, GB
YE
GR
GB
BL
Marking of Classification
TYPE
Note1: Specify both the part number and a rank in this format when ordering
(e.g.) rank GB: TLP290(GB,SE
For safety standard certification, however, specify the part number alone.
(e.g.) TLP290(GB,SE: TLP290
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25°C)
Characteristic
R.M.S. forward current
Input forward current derating
LED
Input forward current (pulsed)
Input power dissipation
Input power dissipation derating
Junction temperature
Collector-emitter voltage
Emitter-collector voltage
Detector
Collector current
Collector power dissipation
Collector power dissipation derating (Ta
≥
25°C)
Junction temperature
Operating temperature range
Storage temperature range
Lead soldering temperature
Total package power dissipation
Total package power dissipation derating (Ta
≥
25°C)
Isolation voltage
(Ta
≥
90°C)
(Ta
≥
90°C)
Symbol
I
F(RMS)
∆I
F
/∆Ta
I
FP
P
D
∆P
D
/∆Ta
T
j
V
CEO
V
ECO
I
C
P
C
∆P
C
/∆Ta
T
j
T
opr
T
stg
T
sol
P
T
∆P
T
/∆Ta
BV
S
(Note3)
(Note 2)
Note
Rating
±50
-1.5
±1
100
-3.0
125
80
7
50
150
-1.5
125
-55
to 110
-55
to 125
260 (10s)
200
-2.0
3750
Unit
mA
mA /°C
A
mW
mW/°C
°C
V
V
mA
mW
mW /°C
°C
°C
°C
°C
mW
mW /°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note2:
Note3:
Pulse width
≤
100μs, frequency 100Hz
AC, 1min., R.H.≤ 60%, Device considered a two terminal device: LED side pins shorted together and
detector side pins shorted together.
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TLP290(SE
Electrical Characteristics (Unless otherwise specified, Ta = 25°C)
Characteristic
LED
Input forward voltage
Input capacitance
Collector-emitter breakdown voltage
Detector
Emitter-collector breakdown voltage
Dark current
Collector-emitter capacitance
Symbol
V
F
C
T
V
(BR) CEO
V
(BR) ECO
I
CEO
C
CE
Test Condition
I
F
= ±10 mA
V = 0 V, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
V
CE
= 48 V,
V
CE
= 48 V, Ta = 85°C
V = 0 V, f = 1 MHz
Min
1.1
-
80
7
-
-
-
Typ
1.25
60
-
-
0.01
2
10
Max
1.4
-
-
-
0.08
50
-
Unit
V
pF
V
V
μA
μA
pF
Coupled Electrical Characteristics
(Unless otherwise specified, Ta = 25°C)
Characteristic
Symbol
Test Condition
I
F
= ±5 mA, V
CE
= 5 V
Rank GB
IF = ±1 mA, V
CE
= 0.4 V
Rank GB
I
C
= 2.4 mA, I
F
= ±8 mA
Collector-emitter
saturation voltage
V
CE (sat)
I
C
= 0.2 mA, I
F
= ±1 mA
Rank GB
Off-state collector current
Collector current ratio
I
C(off)
I
C (ratio)
V
F
= ± 0.7 V, V
CE
= 48 V
I
C
(I
F
=
-5
mA) / I
C
(I
F
= 5 mA)
(Fig.1)
MIn
50
100
-
30
-
-
-
-
0.33
Typ.
-
-
60
-
-
0.2
-
-
-
Max
600
%
600
-
%
-
0.3
-
0.3
10
3
μA
-
V
Unit
Current transfer ratio
I
C
/ I
F
Saturated CTR
I
C
/ I
F (sat)
Fig.1: Collector current ratio test circuit
I
C1
½
5V)
I (I
½
I , V
IC(ratio)
½
C2 F F2 CE
IC1(IF
½
IF1, VCE
½
5V)
I
F1
I
C2
I
F2
V
CE
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2013-05-27
TLP290(SE
Isolation Characteristics
(Unless otherwise specified, Ta = 25°C)
Characteristic
Total capacitance (input to output)
Isolation resistance
Symbol
C
S
R
S
Test Condition
V
S
= 0V, f = 1 MHz
V
S
= 500 V, R.H.≤ 60%
AC, 1 minute
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
Min
-
1×10
12
Typ.
0.8
10
14
Max
-
-
-
-
-
Unit
pF
Ω
3750
-
-
-
10000
10000
V
rms
V
dc
Switching Characteristics
(Unless otherwise specified, Ta = 25°C)
Characteristic
Rise time
Fall time
Turn
-
on time
Turn
-
off time
Turn
-
on time
Storage time
Turn
-
off time
Symbol
t
r
t
f
t
on
t
off
t
on
t
s
t
off
R
L
= 1.9 k
Ω
V
CC
= 5 V, I
F
= ±16 mA
(Fig.2)
V
CC
= 10 V, I
C
= 2 mA
R
L
= 100
Ω
Test Condition
Min
-
-
-
-
-
-
-
Typ.
2
3
3
3
0.5
30
50
Max
-
-
-
-
-
-
-
μ
s
μ
s
Unit
(Fig. 2): Switching time test circuit
I
F
V
C
V
CE
I
F
V
CE
t
on
t
off
t
S
R
L
V
C
4.5V
0.5V
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2013-05-27
TLP290(SE
I F - Ta
P C - Ta
I F (mA)
This curve shows the
maximum limit to the input
forward current.
Collector power dissipation
Input forward current
P
C
(mW)
This curve shows the maximum
limit to the collector power
dissipation.
Ambient temperature
Ta
(˚C)
Ambient temperature
Ta
(˚C)
IFP-DR
10000
IF-VF
Pules width
≤100μs
Ta=25˚C
Input forward current (pulsed)
I
FP
(mA)
1000
Input forward current
I
F
(mA)
100
110˚C
85˚C
50˚C
25˚C
0˚C
-25˚C
-55˚C
This curve shows the
maximum limit to the input
forward current (pulsed).
10
10
-3
10
-2
10
-1
10
0
Duty cycle ratio
D
R
Input forward voltage
V
F
(V)
∆
V F /
∆
Ta - I F
Input forward current temperature coefficient
ΔV
F
/ΔTa (mV/°C)
(mA)
IFP – VFP
Input forward current (pulsed)
I
FP
Pulse width
≤10μs
Repetitive frequency=100Hz
Ta=25°C
Input forward current
I
F
(mA)
Input forward voltage (pulsed)
V
FP
(V)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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2013-05-27
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