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BYV28-100

Description
Rectifier Diode,
Categorydiode    Rectifier diode   
File Size31KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance  
Download Datasheet Parametric Compare View All

BYV28-100 Overview

Rectifier Diode,

BYV28-100 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
package instructionO-PALF-W2
Reach Compliance Codecompliant
Is SamacsysN
Other featuresHIGH RELIABILITY
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current90 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current3.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage100 V
Maximum reverse current5 µA
Maximum reverse recovery time0.035 µs
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
BYV28 SERIES
PRV : 50 - 200 Volts
Io : 3.5 Amperes
FEATURES :
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Very fast recovery
Pb / RoHS Free
EPITAXIAL AVALANCHE DIODES
D2A
0.161 (4.1)
0.154 (3.9)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
0.040 (1.02)
0.0385 (0.98)
1.00 (25.4)
MIN.
MECHANICAL DATA :
* Case : D2A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.645 gram
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Min. Reverse Avalanche Breakdown Voltage @ I
R
= 0.1 mA
Maximum Average Forward Current
T
tp
= 85
°C
(Note 1)
SYMBOL
V
RRM
V
R
V
(BR)R-min.
I
F(AV)
I
FSM
I
FRM
V
F
I
R
I
R(H)
Trr
R
th j-tp
T
J
T
STG
BYV28-50 BYV28-100 BYV28-150 BYV28-200
50
50
55
100
100
110
3.5
90
25
1.1
5
150
35
25
- 65 to + 175
- 65 to + 175
150
150
165
200
200
220
UNIT
V
V
V
A
A
A
V
µA
µA
ns
K/W
°C
°C
Maximum Non-Repetitive Peak Forward Surge Current
Maximum Repetitive Peak Forward Current
Maximum Forward Voltage at I
F
= 5.0 Amps. (Note 2)
Maximum Reverse Current at V
R
= V
RRM max
, Tj = 25
°C
Maximum Reverse Current at V
R
= V
RRM max
, Tj = 165
°C
Maximum Reverse Recovery Time (Note 3)
Thermal Resistance - Junction to tie-point (Note 1)
Junction Temperature Range
Storage Temperature Range
Notes :
(1) Lead Length 10 mm.
(2) Measured under pulse conditions to avoid excessive dissipation.
(3) Switched from I
F
= 0.5A to I
R
= 1A.
Page 1 of 2
Rev. 03 : July 8, 2005

BYV28-100 Related Products

BYV28-100 BYV28-50 BYV28-200 PTN0805K2521BGT1
Description Rectifier Diode, Rectifier Diode, Rectifier Diode, RESISTOR, THIN FILM, 0.2 W, 0.1 %, 100 ppm, 2520 ohm, SURFACE MOUNT, 0805, CHIP, ROHS COMPLIANT
Is it lead-free? Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to
Reach Compliance Code compliant compliant compliant compliant
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY ANTI-SULFUR; LASER TRIMMABLE; NON-INDUCTIVE
Number of terminals 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 155 °C
Minimum operating temperature -65 °C -65 °C -65 °C -55 °C
Package form LONG FORM LONG FORM LONG FORM SMT
surface mount NO NO NO YES
technology AVALANCHE AVALANCHE AVALANCHE THIN FILM
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] -
package instruction O-PALF-W2 - O-PALF-W2 SMT, 0805
application FAST RECOVERY FAST RECOVERY FAST RECOVERY -
Shell connection ISOLATED ISOLATED ISOLATED -
Configuration SINGLE SINGLE SINGLE -
Diode component materials SILICON SILICON SILICON -
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE -
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V -
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 -
Maximum non-repetitive peak forward current 90 A 90 A 90 A -
Number of components 1 1 1 -
Phase 1 1 1 -
Maximum output current 3.5 A 3.5 A 3.5 A -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape ROUND ROUND ROUND -
Maximum repetitive peak reverse voltage 100 V 50 V 200 V -
Maximum reverse current 5 µA 5 µA 5 µA -
Maximum reverse recovery time 0.035 µs 0.035 µs 0.035 µs -
Terminal form WIRE WIRE WIRE -
Terminal location AXIAL AXIAL AXIAL -
Base Number Matches 1 1 1 -

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