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CY7C225A-40DC

Description
OTP ROM, 512X8, 25ns, CMOS, CDIP24, 0.300 INCH, SLIM, HERMETIC SEALED, CERDIP-24
Categorystorage   
File Size225KB,9 Pages
ManufacturerCypress Semiconductor
Download Datasheet Parametric Compare View All

CY7C225A-40DC Overview

OTP ROM, 512X8, 25ns, CMOS, CDIP24, 0.300 INCH, SLIM, HERMETIC SEALED, CERDIP-24

CY7C225A-40DC Parametric

Parameter NameAttribute value
MakerCypress Semiconductor
Parts packaging codeDIP
package instructionDIP, DIP24,.3
Contacts24
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Maximum access time25 ns
Other featuresBUFFERED COMMON NOT_PRESET AND NOT_CLEAR INPUTS
I/O typeCOMMON
JESD-30 codeR-GDIP-T24
length31.877 mm
memory density4096 bit
Memory IC TypeOTP ROM
memory width8
Number of functions1
Number of terminals24
word count512 words
character code512
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512X8
Output characteristics3-STATE
Package body materialCERAMIC, GLASS-SEALED
encapsulated codeDIP
Encapsulate equivalent codeDIP24,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
power supply5 V
Programming voltage12.5 V
Certification statusNot Qualified
Maximum seat height5.08 mm
Maximum standby current0.09 A
Maximum slew rate0.09 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
width7.62 mm
Base Number Matches1
1CY 7C22 5A
CY7C225A
512 x 8 Registered PROM
Features
CMOS for optimum speed/power
High speed
TTL-compatible I/O
Direct replacement for bipolar PROMs
Capable of withstanding greater than 2001V static
18 ns address set-up
12 ns clock to output
Low power
discharge
Functional Description
The CY7C225A is a high-performance 512 word by 8 bit elec-
trically programmable read only memory packaged in a slim
300-mil plastic or hermetic DIP, 28-pin leadless chip carrier,
and 28-pin PLCC. The memory cells utilize proven EPROM
floating gate technology and byte-wide intelligent program-
ming algorithms.
The CY7C225A replaces bipolar devices and offers the advan-
tages of lower power, superior performance, and high pro-
gramming yield. The EPROM cell requires only 12.5V for the
supervoltage and low current requirements allow for gang pro-
gramming. The EPROM cells allow for each memory location
to be tested 100%, as each location is written into, erased, and
repeatedly exercised prior to encapsulation. Each PROM is
also tested for AC performance to guarantee that after custom-
er programming the product will meet AC specification limits.
495 mW (commercial)
660 mW (military)
Synchronous and asynchronous output enables
On-chip edge-triggered registers
Buffered common PRESET and CLEAR inputs
EPROM technology, 100% programmable
Slim 300-mil, 24-pin plastic or hermetic DIP, 28-pin LCC,
or 28-pin PLCC
5V
±10%
V
CC
, commercial and military
Logic Block Diagram
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
COLUMN
ADDRESS
O
2
O
1
ADDRESS
DECODER
8-BIT
EDGE-
TRIGGERED
REGISTER
ROW
ADDRESS
PROGRAMMABLE
ARRAY
MULTIPLEXER
O
5
O
4
O
7
Pin Configurations
DIP
Top View
A
7
O
6
A
6
A
5
A
4
A
3
A
2
A
1
A
0
O
3
O
0
O
1
O
2
GND
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
V
CC
A
8
PS
E
CLR
E
S
CP
O
7
O
6
O
5
O
4
O
3
C225A-2
PS
CLR
CP
S
R
CP
O
0
LCC/PLCC
Top View
E
S
E
C225A-1
A
4
A
3
A
2
A
1
A
0
NC
O
0
4 3 2 1 28 27 26
25
5
24
6
23
7
22
8
21
9
20
10
19
11
12 13 141516 17 18
E
CLR
E
S
CP
NC
O
7
O
6
C225A-3
Cypress Semiconductor Corporation
3901 North First Street
San Jose •
CA 95134 •
408-943-2600
December 1992 – Revised March 1995

CY7C225A-40DC Related Products

CY7C225A-40DC 5962-8851805LA CY7C225A-30PC CY7C225A-40PC CY7C225A-18PC 5962-8851804LA CY7C225A-35LMB CY7C225A-35DMB
Description OTP ROM, 512X8, 25ns, CMOS, CDIP24, 0.300 INCH, SLIM, HERMETIC SEALED, CERDIP-24 OTP ROM, 512X8, 25ns, CMOS, CDIP24, 0.300 INCH, CERDIP-24 OTP ROM, 512X8, 15ns, CMOS, PDIP24, 0.300 INCH, SLIM, PLASTIC, DIP-24 OTP ROM, 512X8, 25ns, CMOS, PDIP24, 0.300 INCH, SLIM, PLASTIC, DIP-24 OTP ROM, 512X8, 12ns, CMOS, PDIP24, 0.300 INCH, SLIM, PLASTIC, DIP-24 OTP ROM, 512X8, 20ns, CMOS, CDIP24, 0.300 INCH, CERDIP-24 OTP ROM, 512X8, 20ns, CMOS, CQCC28, LCC-28 OTP ROM, 512X8, 20ns, CMOS, CDIP24, 0.300 INCH, SLIM, HERMETIC SEALED, CERDIP-24
Maker Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor
Parts packaging code DIP DIP DIP DIP DIP DIP QLCC DIP
package instruction DIP, DIP24,.3 DIP, DIP24,.3 DIP, DIP24,.3 DIP, DIP24,.3 DIP, DIP24,.3 DIP, DIP24,.3 QCCN, LCC28,.45SQ DIP, DIP24,.3
Contacts 24 24 24 24 24 24 28 24
Reach Compliance Code unknown not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum access time 25 ns - 15 ns 25 ns 12 ns 20 ns 20 ns 20 ns
Other features BUFFERED COMMON NOT_PRESET AND NOT_CLEAR INPUTS - BUFFERED COMMON NOT_PRESET AND NOT_CLEAR INPUTS BUFFERED COMMON NOT_PRESET AND NOT_CLEAR INPUTS BUFFERED COMMON NOT_PRESET AND NOT_CLEAR INPUTS - BUFFERED COMMON NOT_PRESET AND NOT_CLEAR INPUTS BUFFERED COMMON NOT_PRESET AND NOT_CLEAR INPUTS
I/O type COMMON - COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-GDIP-T24 - R-PDIP-T24 R-PDIP-T24 R-PDIP-T24 R-GDIP-T24 S-CQCC-N28 R-GDIP-T24
length 31.877 mm - 30.099 mm 30.099 mm 30.099 mm 31.877 mm 11.43 mm 31.877 mm
memory density 4096 bit - 4096 bit 4096 bit 4096 bit 4096 bit 4096 bit 4096 bit
Memory IC Type OTP ROM - OTP ROM OTP ROM OTP ROM OTP ROM OTP ROM OTP ROM
memory width 8 - 8 8 8 8 8 8
Number of functions 1 - 1 1 1 1 1 1
Number of terminals 24 - 24 24 24 24 28 24
word count 512 words - 512 words 512 words 512 words 512 words 512 words 512 words
character code 512 - 512 512 512 512 512 512
Operating mode SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C - 70 °C 70 °C 70 °C 125 °C 125 °C 125 °C
organize 512X8 - 512X8 512X8 512X8 512X8 512X8 512X8
Output characteristics 3-STATE - 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material CERAMIC, GLASS-SEALED - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY CERAMIC, GLASS-SEALED CERAMIC, METAL-SEALED COFIRED CERAMIC, GLASS-SEALED
encapsulated code DIP - DIP DIP DIP DIP QCCN DIP
Encapsulate equivalent code DIP24,.3 - DIP24,.3 DIP24,.3 DIP24,.3 DIP24,.3 LCC28,.45SQ DIP24,.3
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR SQUARE RECTANGULAR
Package form IN-LINE - IN-LINE IN-LINE IN-LINE IN-LINE CHIP CARRIER IN-LINE
Parallel/Serial PARALLEL - PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
power supply 5 V - 5 V 5 V 5 V 5 V 5 V 5 V
Programming voltage 12.5 V - 12.5 V 12.5 V 12.5 V 12.5 V 12.5 V 12.5 V
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 5.08 mm - 4.826 mm 4.826 mm 4.826 mm 5.08 mm 1.9812 mm 5.08 mm
Maximum standby current 0.09 A - 0.09 A 0.09 A 0.09 A 0.12 A 0.12 A 0.12 A
Maximum slew rate 0.09 mA - 0.09 mA 0.09 mA 0.09 mA 0.12 mA 0.12 mA 0.12 mA
Maximum supply voltage (Vsup) 5.5 V - 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V - 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V - 5 V 5 V 5 V 5 V 5 V 5 V
surface mount NO - NO NO NO NO YES NO
technology CMOS - CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL - COMMERCIAL COMMERCIAL COMMERCIAL MILITARY MILITARY MILITARY
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE NO LEAD THROUGH-HOLE
Terminal pitch 2.54 mm - 2.54 mm 2.54 mm 2.54 mm 2.54 mm 1.27 mm 2.54 mm
Terminal location DUAL - DUAL DUAL DUAL DUAL QUAD DUAL
width 7.62 mm - 7.62 mm 7.62 mm 7.62 mm 7.62 mm 11.43 mm 7.62 mm
Base Number Matches 1 1 1 1 1 1 - -
Is it Rohs certified? - incompatible incompatible incompatible incompatible incompatible incompatible incompatible
JESD-609 code - - e0 e0 e0 e0 e0 e0
Peak Reflow Temperature (Celsius) - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Terminal surface - - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - hot dipped Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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