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CY7C225A-35LMB

Description
OTP ROM, 512X8, 20ns, CMOS, CQCC28, LCC-28
Categorystorage    storage   
File Size225KB,9 Pages
ManufacturerCypress Semiconductor
Download Datasheet Parametric Compare View All

CY7C225A-35LMB Overview

OTP ROM, 512X8, 20ns, CMOS, CQCC28, LCC-28

CY7C225A-35LMB Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerCypress Semiconductor
Parts packaging codeQLCC
package instructionQCCN, LCC28,.45SQ
Contacts28
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum access time20 ns
Other featuresBUFFERED COMMON NOT_PRESET AND NOT_CLEAR INPUTS
I/O typeCOMMON
JESD-30 codeS-CQCC-N28
JESD-609 codee0
length11.43 mm
memory density4096 bit
Memory IC TypeOTP ROM
memory width8
Number of functions1
Number of terminals28
word count512 words
character code512
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize512X8
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeQCCN
Encapsulate equivalent codeLCC28,.45SQ
Package shapeSQUARE
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage12.5 V
Certification statusNot Qualified
Filter levelMIL-STD-883
Maximum seat height1.9812 mm
Maximum standby current0.12 A
Maximum slew rate0.12 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width11.43 mm
1CY 7C22 5A
CY7C225A
512 x 8 Registered PROM
Features
CMOS for optimum speed/power
High speed
TTL-compatible I/O
Direct replacement for bipolar PROMs
Capable of withstanding greater than 2001V static
18 ns address set-up
12 ns clock to output
Low power
discharge
Functional Description
The CY7C225A is a high-performance 512 word by 8 bit elec-
trically programmable read only memory packaged in a slim
300-mil plastic or hermetic DIP, 28-pin leadless chip carrier,
and 28-pin PLCC. The memory cells utilize proven EPROM
floating gate technology and byte-wide intelligent program-
ming algorithms.
The CY7C225A replaces bipolar devices and offers the advan-
tages of lower power, superior performance, and high pro-
gramming yield. The EPROM cell requires only 12.5V for the
supervoltage and low current requirements allow for gang pro-
gramming. The EPROM cells allow for each memory location
to be tested 100%, as each location is written into, erased, and
repeatedly exercised prior to encapsulation. Each PROM is
also tested for AC performance to guarantee that after custom-
er programming the product will meet AC specification limits.
495 mW (commercial)
660 mW (military)
Synchronous and asynchronous output enables
On-chip edge-triggered registers
Buffered common PRESET and CLEAR inputs
EPROM technology, 100% programmable
Slim 300-mil, 24-pin plastic or hermetic DIP, 28-pin LCC,
or 28-pin PLCC
5V
±10%
V
CC
, commercial and military
Logic Block Diagram
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
COLUMN
ADDRESS
O
2
O
1
ADDRESS
DECODER
8-BIT
EDGE-
TRIGGERED
REGISTER
ROW
ADDRESS
PROGRAMMABLE
ARRAY
MULTIPLEXER
O
5
O
4
O
7
Pin Configurations
DIP
Top View
A
7
O
6
A
6
A
5
A
4
A
3
A
2
A
1
A
0
O
3
O
0
O
1
O
2
GND
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
V
CC
A
8
PS
E
CLR
E
S
CP
O
7
O
6
O
5
O
4
O
3
C225A-2
PS
CLR
CP
S
R
CP
O
0
LCC/PLCC
Top View
E
S
E
C225A-1
A
4
A
3
A
2
A
1
A
0
NC
O
0
4 3 2 1 28 27 26
25
5
24
6
23
7
22
8
21
9
20
10
19
11
12 13 141516 17 18
E
CLR
E
S
CP
NC
O
7
O
6
C225A-3
Cypress Semiconductor Corporation
3901 North First Street
San Jose •
CA 95134 •
408-943-2600
December 1992 – Revised March 1995

CY7C225A-35LMB Related Products

CY7C225A-35LMB 5962-8851805LA CY7C225A-30PC CY7C225A-40DC CY7C225A-40PC CY7C225A-18PC 5962-8851804LA CY7C225A-35DMB
Description OTP ROM, 512X8, 20ns, CMOS, CQCC28, LCC-28 OTP ROM, 512X8, 25ns, CMOS, CDIP24, 0.300 INCH, CERDIP-24 OTP ROM, 512X8, 15ns, CMOS, PDIP24, 0.300 INCH, SLIM, PLASTIC, DIP-24 OTP ROM, 512X8, 25ns, CMOS, CDIP24, 0.300 INCH, SLIM, HERMETIC SEALED, CERDIP-24 OTP ROM, 512X8, 25ns, CMOS, PDIP24, 0.300 INCH, SLIM, PLASTIC, DIP-24 OTP ROM, 512X8, 12ns, CMOS, PDIP24, 0.300 INCH, SLIM, PLASTIC, DIP-24 OTP ROM, 512X8, 20ns, CMOS, CDIP24, 0.300 INCH, CERDIP-24 OTP ROM, 512X8, 20ns, CMOS, CDIP24, 0.300 INCH, SLIM, HERMETIC SEALED, CERDIP-24
Maker Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor
Parts packaging code QLCC DIP DIP DIP DIP DIP DIP DIP
package instruction QCCN, LCC28,.45SQ DIP, DIP24,.3 DIP, DIP24,.3 DIP, DIP24,.3 DIP, DIP24,.3 DIP, DIP24,.3 DIP, DIP24,.3 DIP, DIP24,.3
Contacts 28 24 24 24 24 24 24 24
Reach Compliance Code not_compliant not_compliant not_compliant unknown not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Is it Rohs certified? incompatible incompatible incompatible - incompatible incompatible incompatible incompatible
Maximum access time 20 ns - 15 ns 25 ns 25 ns 12 ns 20 ns 20 ns
Other features BUFFERED COMMON NOT_PRESET AND NOT_CLEAR INPUTS - BUFFERED COMMON NOT_PRESET AND NOT_CLEAR INPUTS BUFFERED COMMON NOT_PRESET AND NOT_CLEAR INPUTS BUFFERED COMMON NOT_PRESET AND NOT_CLEAR INPUTS BUFFERED COMMON NOT_PRESET AND NOT_CLEAR INPUTS - BUFFERED COMMON NOT_PRESET AND NOT_CLEAR INPUTS
I/O type COMMON - COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code S-CQCC-N28 - R-PDIP-T24 R-GDIP-T24 R-PDIP-T24 R-PDIP-T24 R-GDIP-T24 R-GDIP-T24
JESD-609 code e0 - e0 - e0 e0 e0 e0
length 11.43 mm - 30.099 mm 31.877 mm 30.099 mm 30.099 mm 31.877 mm 31.877 mm
memory density 4096 bit - 4096 bit 4096 bit 4096 bit 4096 bit 4096 bit 4096 bit
Memory IC Type OTP ROM - OTP ROM OTP ROM OTP ROM OTP ROM OTP ROM OTP ROM
memory width 8 - 8 8 8 8 8 8
Number of functions 1 - 1 1 1 1 1 1
Number of terminals 28 - 24 24 24 24 24 24
word count 512 words - 512 words 512 words 512 words 512 words 512 words 512 words
character code 512 - 512 512 512 512 512 512
Operating mode SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 125 °C - 70 °C 70 °C 70 °C 70 °C 125 °C 125 °C
organize 512X8 - 512X8 512X8 512X8 512X8 512X8 512X8
Output characteristics 3-STATE - 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material CERAMIC, METAL-SEALED COFIRED - PLASTIC/EPOXY CERAMIC, GLASS-SEALED PLASTIC/EPOXY PLASTIC/EPOXY CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED
encapsulated code QCCN - DIP DIP DIP DIP DIP DIP
Encapsulate equivalent code LCC28,.45SQ - DIP24,.3 DIP24,.3 DIP24,.3 DIP24,.3 DIP24,.3 DIP24,.3
Package shape SQUARE - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER - IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Parallel/Serial PARALLEL - PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 5 V - 5 V 5 V 5 V 5 V 5 V 5 V
Programming voltage 12.5 V - 12.5 V 12.5 V 12.5 V 12.5 V 12.5 V 12.5 V
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.9812 mm - 4.826 mm 5.08 mm 4.826 mm 4.826 mm 5.08 mm 5.08 mm
Maximum standby current 0.12 A - 0.09 A 0.09 A 0.09 A 0.09 A 0.12 A 0.12 A
Maximum slew rate 0.12 mA - 0.09 mA 0.09 mA 0.09 mA 0.09 mA 0.12 mA 0.12 mA
Maximum supply voltage (Vsup) 5.5 V - 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V - 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V - 5 V 5 V 5 V 5 V 5 V 5 V
surface mount YES - NO NO NO NO NO NO
technology CMOS - CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level MILITARY - COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL MILITARY MILITARY
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - hot dipped Tin/Lead (Sn/Pb)
Terminal form NO LEAD - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal pitch 1.27 mm - 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm
Terminal location QUAD - DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 11.43 mm - 7.62 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm
Base Number Matches - 1 1 1 1 1 1 -

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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