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BF421

Description
Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size62KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
Download Datasheet Parametric View All

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BF421 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3

BF421 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicro Commercial Components (MCC)
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
Base Number Matches1
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BF421
BF423
Features
Capable of 0.83Watts of Power Dissipation.
Collector-current 0.1A
Collector-base Voltage: BF421 300V
BF423 250V
Operating and storage junction temperature range: -55
O
C to +150
O
C
PNP Silicon
Plastic-Encapsulate
Transistor
TO-92
A
E
Case Material: Molded Plastic.
Classification Rating 94V-0
UL Flammability
Marking: Type Number
B
Electrical Characteristics @ 25 C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=1.0mAdc, I
B
=0)
BF421
BF423
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
BF421
BF423
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=200Vdc, I
E
=0)
Emitter Cutoff C
urrent
(V
EB
=5.0Vdc, I
C
=0)
DC Current Gain
(I
C
=25mAdc,V
CE
=20Vdc)
Collector-Emitter Saturation Voltage
(I
C
=30mAdc, I
B
=5.0mAdc)
Transition Frequency
(V
CE
=10Vdc, I
C
=10mA dc, f=100MHz)
Min
Max
Units
O
OFF CHARACTERISTICS
V
(BR)CEO
300
250
300
250
5.0
---
---
---
---
---
---
---
0.01
0.05
Vdc
C
Vdc
Adc
uAdc
uAdc
D
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
CE(sat)
f
T
50
---
60
---
0.6
---
---
Vdc
MHz
G
DIMENSIONS
INCHES
MIN
.170
.170
.550
.010
.130
.010
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
B C
E
DIM
A
B
C
D
E
G
MAX
.190
.190
.590
.020
.160
.104
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
www.mccsemi.com
Revision: 4
1 of 2
2006/05/26
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