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FPD750SOT89CESQ

Description
RF Small Signal Field-Effect Transistor, N-Channel,
CategoryDiscrete semiconductor    The transistor   
File Size862KB,12 Pages
ManufacturerQorvo
Websitehttps://www.qorvo.com
Environmental Compliance
Download Datasheet Parametric Compare View All

FPD750SOT89CESQ Overview

RF Small Signal Field-Effect Transistor, N-Channel,

FPD750SOT89CESQ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerQorvo
package instruction,
Reach Compliance Codecompliant
Is SamacsysN
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power consumption environment1.8 W
Base Number Matches1
FPD750SOT89
CE Low-Noise
High-Linearity
Packaged
pHEMT
FPD750SOT89CE
LOW-NOISE HIGH-LINEARITY PACKAGED
pHEMT
Package Style: SOT89
Product Description
The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomor-
phic High Electron Mobility Transistor (pHEMT). It features a 0.25μmx1500μm
Schottky barrier gate, defined by high-resolution stepper-based photolithography.
The double recessed gate structure minimizes parasitics to optimize performance.
The epitaxial structure is designed for improved linearity over a range of bias condi-
tions and input power levels.
Features
25dBm Output Power (P1dB)
18dB Small-Signal Gain
(SSG)
0.6dB Noise Figure
39dBm OIP
3
55% Power-Added Efficiency
FPD750SOT89CE: RoHS
Compliant (Directive
2002/95/EC)
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Applications
Drivers or Output Stages in
PCS/Cellular Base Station
Transmitter Amplifiers
High Intercept-point LNAs
WLL, WLAN, and Other Types
of Wireless Infrastructure
Systems.
Parameter
P
1dB
Gain Compression
Small-Signal Gain (SSG)
PAE
Noise Figure (NF)
OIP
3
Min.
23
16.5
Specification
Typ.
25
18
50
0.8
Max.
Unit
dBm
dB
%
dB
dB
dBm
dBm
Condition
V
DS
=5V, I
DS
=50% I
DSS
V
DS
=5V, I
DS
=50% I
DSS
V
DS
=5V, I
DS
=50% I
DSS
, P
OUT
=P
1dB
V
DS
=5V, I
DS
=50%
V
DS
=5V, I
DS
=25%
V
DS
=5V, I
DS
=50% I
DSS
. Matched for optimal
power.
Matched for best IP
3
V
DS
=1.3V, V
GS
=0V
V
DS
=1.3V, V
GS
≈+1V
V
DS
=1.3V, V
GS
=0V
V
GS
=-5V
V
DS
=1.3V, I
DS
=0.75mA
I
GS
=0.75mA
I
GD
=0.75mA
1.0
36
0.6
38
39
Saturated Drain-Source Current (I
DSS
)
Maximum Drain-Source Current
(I
MAX
)
Transconductance (GM)
Gate-Source Leakage Current (IGSO)
Pinch-Off Voltage (V
P
)
Gate-Source Breakdown Voltage
(V
BDGS
)
Gate-Drain Breakdown Voltage
(V
BDGD
)
185
230
375
200
280
mA
mA
ms
|0.7|
|12|
|12|
1
|1.0|
|16|
|16|
15
|1.3|
μA
V
V
V
Thermal Resistivity (θJC) *
83
°C/W
*Note: T
AMBIENT
=22°C, RF specifications measured at f=1850GHz using CW signal (except as noted).
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS100121
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 12

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FPD750SOT89CESQ FPD750SOT89CESB FPD750SOT89CESR
Description RF Small Signal Field-Effect Transistor, N-Channel, RF Small Signal Field-Effect Transistor, N-Channel, RF Small Signal Field-Effect Transistor, N-Channel,
Is it Rohs certified? conform to conform to conform to
Maker Qorvo Qorvo Qorvo
Reach Compliance Code compliant compliant compliant
Is Samacsys N N N
Maximum operating temperature 175 °C 175 °C 175 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 1.8 W 1.8 W 1.8 W
Base Number Matches 1 1 1
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