TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
Rev. 03 — 26 March 2007
Product data sheet
1. General description
The TEA1610 is a monolithic integrated circuit implemented in a high-voltage Diffusion
Metal Oxide Semiconductor (DMOS) process. The circuit is a high voltage controller for a
zero-voltage switching resonant converter. The IC provides the drive function for
two discrete power MOSFETs in a half-bridge configuration. It also includes a level-shift
circuit, an oscillator with accurately-programmable frequency range, a latched shut-down
function and a transconductance error amplifier.
To guarantee an accurate 50 % switching duty factor, the oscillator signal passes through
a divide-by-two flip-flop before being fed to the output drivers.
The circuit is very flexible and enables a broad range of applications for different mains
voltages.
V
HS
V
DD
bridge voltage
supply
(high side)
MOSFET
SWITCH
TEA1610
HALF-
BRIDGE
CIRCUIT
RESONANT
CONVERTER
mgu336
signal
ground
power ground
Fig 1. Basic configuration
2. Features
I
Integrated high voltage level-shift
I
Transconductance error amplifier for
function
ultra high-ohmic regulation feedback
I
Integrated high voltage bootstrap diode
I
Latched shut-down circuit for
overcurrent and overvoltage protection
I
Low start-up current (green function)
I
Adjustable minimum and maximum
frequencies
I
Adjustable dead time
I
Undervoltage lockout
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
3. Applications
I
TV and monitor power supplies
I
High voltage power supplies
4. Quick reference data
Table 1.
Symbol
V
HS
I
GH(source)
Quick reference data
Parameter
high side driver voltage
high side output source
current
low side output source
current
high side output sink
current
V
DD(F)
= 13 V;
V
SH
= 0 V;
V
GH
= 0 V
V
GL
= 0 V
V
DD(F)
= 13 V;
V
SH
= 0 V;
V
GH
= 13 V
[1]
Conditions
Min
0
−135
Typ
-
−180
Max
600
−225
Unit
V
mA
I
GL(source)
I
GH(sink)
−135
-
−180
300
−225
-
mA
mA
I
GL(sink)
f
bridge(max)
low side output sink current V
GL
= 14 V
maximum bridge frequency C
F
= 100 pF;
I
IFS
= 1 mA;
I
IRS
= 200
µA;
f
OSC
f
bridge
= ------------
-
2
-
450
300
500
-
550
mA
kHz
V
I(CM)
[1]
[2]
common mode input
voltage
[2]
-
-
2.5
V
The frequency of the oscillator depends on the value of capacitor C
f
, the peak-to-peak voltage swing V
CF
,
and the charge/discharge currents I
CF(ch)
and I
CF(dis)
.
This parameter applies specifically to the error amplifier.
5. Ordering information
Table 2.
Ordering information
Package
Name
TEA1610P
TEA1610T
DIP16
SO16
Description
plastic dual in-line package; 16 leads (300 mil); long body
plastic small outline package; 16 leads; body width 3.9 mm;
low stand-off height
Version
SOT38-1
SOT109-2
Type number
TEA1610T_P_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 26 March 2007
2 of 21
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
6. Block diagram
V
DD
11
8
BOOTSTRAP
SUPPLY
LEVEL
SHIFTER
HIGH SIDE
DRIVER
7
6
GH
SH
V
DD(F)
TEA1610
reset
LOW SIDE
DRIVER
start/stop oscillation
shut-down
9
start-up
LOGIC
10
4
15
GL
PGND
SD
SGND
2.33 V
÷2
2
1
gm
ERROR
AMPLIFIER
2.5 V
3V
0.6 V
I
+
I
−
×
2
I
charge
OSCILLATOR
I
discharge
5
n.c.
3
VCO
14
IRS
16
V
REF
12
IFS
13
CF
mgu337
Fig 2. Block diagram
TEA1610T_P_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 26 March 2007
3 of 21
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
7. Pinning information
7.1 Pinning
I−
I+
VCO
PGND
n.c.
SH
GH
V
DD(F)
1
2
3
4
16 V
REF
15 SD
14 IRS
13 CF
I−
I+
VCO
PGND
n.c.
SH
GH
V
DD(F)
1
2
3
4
16 V
REF
15 SD
14 IRS
13 CF
TEA1610P
5
6
7
8
001aaf866
12 IFS
11 V
DD
10 GL
9
SGND
TEA1610T
5
6
7
8
001aaf867
12 IFS
11 V
DD
10 GL
9
SGND
Fig 3. Pin configuration for TEA1610P
Fig 4. Pin configuration for TEA1610T
7.2 Pin description
Table 3.
Symbol
I-
I+
VCO
PGND
n.c.
SH
GH
V
DD(F)
SGND
GL
V
DD
IFS
CF
IRS
SD
V
REF
Pin description
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Description
error amplifier inverting input
error amplifier non-inverting input
error amplifier output
power ground
not connected (high voltage spacer)
high side switch source
gate of the high side switch
floating supply voltage for the high side driver
signal ground
gate of the low side switch
supply voltage
oscillator discharge current input
oscillator capacitor
oscillator charge current input
shut-down input
reference voltage
TEA1610T_P_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 26 March 2007
4 of 21
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
8. Functional description
8.1 Start-up
When the applied voltage at V
DD
reaches V
DD(initial)
(see
Figure 5),
the low side power
switch is turned-on while the high side power switch remains in the non-conducting state.
This start-up output state guarantees the initial charging of the bootstrap capacitor (C
boot
)
used for the floating supply of the high side driver.
During start-up, the voltage on the frequency capacitor (C
f
) is zero and defines the
start-up state. The output voltage of the error amplifier is kept constant (typ. 2.5 V) and
switching starts at about 80 % of the maximum frequency at the moment pin V
DD
reaches
the start level.
The start-up state is maintained until V
DD
reaches the start level (13.5 V), the oscillator is
activated and the converter starts operating.
V
DD
0
V
DD(start)
V
DD(initial)
GH-SH
0
GL
0
t
mgt998
Fig 5. Start-up
TEA1610T_P_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 26 March 2007
5 of 21
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