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P6SMBJ33C

Description
600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size67KB,6 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
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P6SMBJ33C Overview

600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

WTE
POWER SEMICONDUCTORS
P6SMBJ SERIES
Pb
600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Features
!
!
!
!
!
!
!
Glass Passivated Die Construction
600W Peak Pulse Power Dissipation
B
5.0V – 170V Standoff Voltage
Uni- and Bi-Directional Versions Available
Excellent Clamping Capability
A
Fast Response Time
F
Plastic Case Material has UL Flammability
Classification Rating 94V-O
C
H
G

E
SMB/DO-214AA
Dim
Min
Max
3.30
3.94
A
4.06
4.70
B
1.91
2.11
C
0.152
0.305
D
5.08
5.59
E
2.13
2.44
F
0.051
0.203
G
0.76
1.27
H
All Dimensions in mm
“C” Suffix Designates Bi-directional Devices
“A” Suffix Designates 5% Tolerance Devices
No Suffix Designates 10% Tolerance Devices
D
Mechanical Data
!
!
!
!
!
!
Case: SMB/DO-214AA, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band Except Bi-Directional
Marking: Device Code
Weight: 0.093 grams (approx.)
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 6
Maximum Ratings and Electrical Characteristics
Characteristic
Peak Pulse Power Dissipation 10/1000µS Waveform (Note 1, 2) Figure 3
Peak Pulse Current on 10/1000µS Waveform (Note 1) Figure 4
Peak Forward Surge Current 8.3ms Single Half Sine-Wave
Superimposed on Rated Load (JEDEC Method) (Note 2, 3)
Operating and Storage Temperature Range
@T
A
=25°C unless otherwise specified
Symbol
P
PPM
I
PPM
I
FSM
T
j
, T
STG
Value
600 Minimum
See Table 1
100
-55 to +150
Unit
W
A
A
°C
Note: 1. Non-repetitive current pulse per Figure 4 and derated above T
A
= 25°C per Figure 1.
2. Mounted on 5.0mm
2
(0.013mm thick) land area.
3. Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum.
P6SMBJ SERIES
1 of 6
© 2006 Won-Top Electronics
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