DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3575
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3575 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
5
ORDERING INFORMATION
PART NUMBER
2SK3575
2SK3575-S
2SK3575-ZK
2SK3575-Z
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMD
Note
FEATURES
•4.5V
drive available
•Low
on-state resistance
R
DS(on)1
= 4.5 mΩ MAX. (V
GS
= 10 V, I
D
= 42 A)
•Low
gate charge
Q
G
= 70 nC TYP. (V
DD
= 24 V, V
GS
= 10 V, I
D
= 83 A)
•Avalanche
capability ratings
•Surface
mount device available
Note
TO-220SMD package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
30
±20
±83
±332
1.5
105
150
–55 to +150
57
325
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16261EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP(K)
Printed in Japan
The mark
!
shows major revised points.
©
2002
2SK3575
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
°
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 24 V
V
GS
= 10 V
I
D
= 83 A
I
F
= 83 A, V
GS
= 0 V
I
F
= 83 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
TEST CONDITIONS
V
DS
= 30 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 42 A
V
GS
= 10 V, I
D
= 42 A
V
GS
= 4.5 V, I
D
= 42 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 15 V, I
D
= 42 A
V
GS
= 10 V
R
G
= 10
Ω
1.5
27
3.3
4.3
3700
1430
500
26
27
110
40
70
12
20
1.0
61
94
4.5
6.4
MIN.
TYP.
MAX.
10
±100
2.5
UNIT
µ
A
nA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
5
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS
R
L
V
DD
V
DS
90%
90%
10%
10%
V
GS
Wave Form
0
10%
V
GS
90%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µs
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D16261EJ2V0DS
2SK3575
TYPICAL CHARACTERISTICS (T
A
= 25°C)
°
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
120
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
P
T
- Total Power Dissipation - W
100
80
60
40
20
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
1000
I
D (pulse)
R
DS(on)
Lim ited
PW =
10
µs
I
D
- Drain Current - A
100
I
D (D C )
10
Power Dissipation
Lim ited
100
µs
1 ms
10 m s
DC
1
T
C
= 25°C
Single pulse
0.1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
r
th(t)
- Transient Thermal Resistance -
°C/W
R
th(ch-A)
= 83.3°C/W
10
1
R
th(ch-C)
= 1.19°C/W
0.1
Single pulse
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D16261EJ2V0DS
3
2SK3575
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
350
Pulsed
FORWARD TRANSFER CHARACTERISTICS
1000
300
I
D
- Drain Current - A
I
D
- Drain Current - A
100
250
V
GS
= 10 V
200
4.5 V
10
T
ch
= 150°C
75°C
25°C
−55°C
150
100
50
0
0
0.5
1
1.5
2
1
0.1
V
DS
= 10 V
Pulsed
0.01
0
1
2
3
4
5
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| y
fs
| - Forward Transfer Admittance - S
3
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
T
ch
=
−55°C
25°C
75°C
150°C
V
GS(off)
- Gate Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
10
1
V
DS
= 10 V
Pulsed
0.1
0.1
1
10
100
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
Pulsed
8
8
6
V
GS
= 4.5 V
6
4
10 V
4
I
D
= 42 A
2
2
0
1
10
100
1000
0
0
2
4
6
8
10
12
14
16
18
20
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
4
Data Sheet D16261EJ2V0DS
2SK3575
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
8
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000 0
C
iss
, C
oss
, C
rss
- Capacitance - pF
I
D
= 42 A
Pulsed
C
iss
6
V
GS
= 4.5 V
1000
C
o ss
C
rss
4
10 V
100
2
V
GS
= 0 V
f = 1 MHz
0
-50
0
50
100
150
10
0.1
1
10
100
T
ch
- Channel Temperature - °C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30
12
10
V
DD
= 24 V
15 V
V
GS
V
DS
- Drain to Source Voltage - V
25
20
15
10
5
0
t
d (o ff)
100
t
d (o n)
t
f
8
6
4
2
I
D
= 83 A
10
t
r
V
DS
1
0.1
1
10
100
0
0
20
40
60
80
I
D
- Drain Current - A
Q
G
- Gate Change - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
V
GS
= 0 V
100
V
G S
= 10 V
0V
t
rr
- Reverse Recovery Time- ns
I
F
- Diode Forward Current - A
100
10
1
10
0.1
pulsed
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
0.1
1
10
100
V
F(S-D)
- Source to Drain Voltage - V
I
D
- Drain Current - A
Data Sheet D16261EJ2V0DS
5
V
GS
- Gate to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
D D
= 10 V
V
G S
= 10 V
R
G
= 10
Ω
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