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2SK3740-ZK

Description
SWITCHING N-CHANNEL POWER MOSFET
File Size160KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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2SK3740-ZK Overview

SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3740
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3740 is N-channel MOS FET device that
features a low on-state resistance and excellent
switching characteristics, designed for high voltage
applications such as lamp drive, DC/DC converter, and
actuator driver.
ORDERING INFORMATION
PART NUMBER
2SK3740-ZK
PACKAGE
TO-263 (MP-25ZK)
(TO-263)
FEATURES
Gate voltage rating: ±30 V
Low on-state resistance
R
DS(on)
= 160 mΩ MAX. (V
GS
= 10 V, I
D
= 10 A)
Low gate charge
Q
G
= 47 nC TYP. (V
DD
= 200 V, V
GS
= 10 V, I
D
= 20 A)
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
250
±30
±20
±60
1.5
100
150
–55 to +150
20
40
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= 125 V, R
G
= 25
Ω,
V
GS
= 20
0 V, L = 100
µ
H
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
1.25
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16913EJ1V0DS00 (1st edition)
Date Published November 2003 NS CP(K)
Printed in Japan
2003

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