DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3740
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3740 is N-channel MOS FET device that
features a low on-state resistance and excellent
switching characteristics, designed for high voltage
applications such as lamp drive, DC/DC converter, and
actuator driver.
ORDERING INFORMATION
PART NUMBER
2SK3740-ZK
PACKAGE
TO-263 (MP-25ZK)
(TO-263)
FEATURES
•
Gate voltage rating: ±30 V
•
Low on-state resistance
R
DS(on)
= 160 mΩ MAX. (V
GS
= 10 V, I
D
= 10 A)
•
Low gate charge
Q
G
= 47 nC TYP. (V
DD
= 200 V, V
GS
= 10 V, I
D
= 20 A)
•
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
250
±30
±20
±60
1.5
100
150
–55 to +150
20
40
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 125 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V, L = 100
µ
H
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
1.25
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16913EJ1V0DS00 (1st edition)
Date Published November 2003 NS CP(K)
Printed in Japan
2003
2SK3740
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
TEST CONDITIONS
V
DS
= 250 V, V
GS
= 0 V
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1.0 mA
V
DS
= 10 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 10 A
V
DS
= 10 V
V
GS
= 0 V
f = 1.0 MHz
V
DD
= 125 V, I
D
= 10 A
V
GS
= 10 V
R
G
= 0
Ω
MIN.
TYP.
MAX.
10
±10
UNIT
µ
A
µ
A
V
S
2.5
7.0
3.5
15
0.12
1720
330
170
17
17
49
9
4.5
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
0.16
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
V
DD
= 200 V
V
GS
= 10 V
I
D
= 20 A
I
F
= 20 A, V
GS
= 0 V
I
F
= 20 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
47
7
25
0.91
210
1.4
V
F(S-D)
t
rr
Q
rr
µ
C
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
BV
DSS
V
DS
V
GS
0
τ
Starting T
ch
τ
= 1
µ
s
Duty Cycle
≤
1%
I
D
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L
V
DD
PG.
D.U.T.
R
L
V
GS
V
GS
Wave Form
50
Ω
R
G
0
10%
V
GS
90%
V
DD
I
D
90%
90%
I
AS
I
D
V
DD
I
D
0 10%
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D16913EJ1V0DS
2SK3740
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
P
T
- Total Power Dissipation - W
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
100
I
D(DC)
PW = 100
µ
½
I
D
- Drain Current - A
10
I
D(pulse)
1
R
DS(on)
Limited
(at V
GS
= 10 V)
Power Dissipation Limited
1 ms
10 ms
0.1
0.01
0.1
1
10
100
1000
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
R
th(ch-A)
= 83.3°C/W
100
10
1
0.1
0.01
0.001
100
µ
R
th(ch-C)
= 1.25°C/W
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D16913EJ1V0DS
3
2SK3740
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
70
60
I
D
- Drain Current - A
100
V
GS
= 10 V
Pulsed
I
D
- Drain Current - A
10
1
0.1
0.01
0.001
0.0001
V
DS
= 10 V
Pulsed
50
40
30
20
10
0
0
5
10
15
20
25
30
35
40
V
DS
- Drain to Source Voltage - V
T
A
= 150°C
125°C
75°C
25°C
−
40°C
0
1
2
3
4
5
6
7
8
9 10 11 12
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate Cut-off Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
4.5
4
3.5
3
2.5
2
-50 -25
0
25
50
V
DS
= 10 V
I
D
= 1.0 mA
100
V
DS
= 10 V
Pulsed
10
1
T
A
=
−
40°C
25°C
75°C
125°C
150°C
0.1
1
10
100
0.1
75 100 125 150 175
0.01
0.01
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
500
450
400
350
300
250
200
150
100
50
0
1
10
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
400
350
300
250
200
150
100
50
0
3
4
5
6
7
8
9
10
11
12
V
GS
- Gate to Source Voltage - V
V
GS
= 10 V
Pulsed
Pulsed
I
D
= 20 A
10 A
4A
100
4
Data Sheet D16913EJ1V0DS
2SK3740
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
350
300
250
200
150
100
50
0
-50 -25
0
25
50
75 100 125 150 175
T
ch
- Channel Temperature - °C
C
iss
, C
oss
, C
rss
- Capacitance - pF
10000
V
GS
= 10 V
Pulsed
V
GS
= 0 V
f = 1.0 MHz
C
iss
1000
I
D
= 20 A
10 A
100
C
r ss
10
0.1
1
10
100
C
oss
1000
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
V
DS
- Drain to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
350
V
DD
= 125 V
V
GS
= 10 V
R
G
= 0
Ω
300
250
200
150
100
50
0
V
DS
V
GS
V
DD
= 200 V
125 V
50 V
12
10
8
6
4
2
0
0
10
20
30
40
50
Q
G
- Gate Charge - nC
100
t
d(on)
10
t
r
t
d(off)
t
f
1
0.1
1
10
100
I
D
- Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
t
rr
- Reverse Recovery Time - ns
1000
Pulsed
I
F
- Diode Forward Current - A
V
GS
= 0 V
di/dt = 100 A/
µ
s
10
V
GS
= 10 V
1
0V
0.1
100
0.01
0
0.5
1
1.5
V
F(S-D)
- Source to Drain Voltage - V
10
0.1
1
10
100
I
F
- Diode Forward Current - A
Data Sheet D16913EJ1V0DS
5
V
GS
- Gate to Source Voltage - V
I
D
= 20 A
14
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