STB270N04
STB270N04-1 - STP270N04
N-CHANNEL 40V - 2.1mΩ - 160A - TO-220 - D
2
PAK - I
2
PAK
STripFET™ Power MOSFET
General features
Type
STB270N04-1
STB270N04
STP270N04
■
■
V
DSS
40V
40V
40V
R
DS(on)
<2.9mΩ
<2.5mΩ
<2.9mΩ
I
D
120A
160A
120A
P
TOT
330W
330W
330W
TO-220
1
2
3
3
12
I²PAK
100% avalanche tested
Standard threshold drive
1
3
Description
This N-Channel enhancement mode MOSFET is
the latest refinement of STMicroelectronic unique
“Single Feature Size™“ strip-based process with
less critical aligment steps and therefore a
remarkable manufacturing reproducibility. The
resulting transistor shows extremely high packing
density for low on-resistance, rugged avalanche
characteristics and low gate charge.
D²PAK
Applications
■
■
High current, switching application
Automotive
O
Order codes
Sales Type
Marking
B270N04
B270N04
P270N04
Package
I²PAK
D²PAK
TO-220
Packaging
TUBE
TAPE & REEL
TUBE
STB270N04-1
STB270N04
STP270N04
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diagram
Internal schematic
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February 2006
Rev3
1/14
www.st.com
14
Electrical ratings
STB270N04-1 - STB270N04 - STP270N04
1
Electrical ratings
Table 1.
Symbol
V
DS
V
GS
I
D(1)
I
D(1)
I
DM(2)
P
TOT
dv/dt
(3)
E
AS(4)
T
J
T
stg
Absolute maximum ratings
Value
Parameter
TO-220/I²PAK
Drain-Source Voltage (V
GS
= 0)
Gate-Source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
=100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Operating Junction Temperature
Storage Temperature
120
120
480
330
2.2
3.5
1
-55 to 175
40
± 20
160
160
640
D²PAK
V
V
A
A
A
W
Unit
1. Current limited by package
2. Pulse width limited by safe operating area
3. I
SD
≤120A,
di/dt
≤200A/µs,
V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
4. Starting Tj=25°C, Id =80A, Vdd=32V
Table 2.
Symbol
R
thj-case
R
thj-pcb(1)
Thermal data
Thermal resistance junction-case Max
Thermal resistance Junction-pcb Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose (for 10 sec, 1.6mm from case)
--
62.5
300
b
O
so
te
le
R
thj-a
T
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r
P
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t(
bs
-O
et
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P
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t(
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J
°C
W/°C
V/ns
Value
Unit
TO-220/I²PAK
0.45
35
--
--
D²PAK
°C/W
°C/W
°C/W
°C
Parameter
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
2/14
Rev3
STB270N04-1 - STB270N04 - STP270N04
Electrical characteristics
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
V
(BR)DSS
On/off states
Parameter
Drain-Source
Breakdown Voltage
Test Condictions
I
D
= 250µA, V
GS
= 0
Min.
40
10
100
Typ. Max. Unit
V
µA
µA
I
DSS
V
DS
= Max Rating,
Zero Gate Voltage Drain
V
DS
= MaxRating
Current (V
GS
= 0)
@125°C
Gate Body Leakage
Current
(V
DS
= 0)
V
GS
= ±20V
2
TO-220
I²PAK
D²PAK
I
GSS
V
GS(th)
±
200
nA
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On
Resistance
R
DS(on)
V
GS
= 10V, I
D
= 80A
Table 4.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Condictions
O
so
b
te
le
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
r
P
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
uc
od
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t(
bs
-O
V
GS
=10V
V
DS
=15V, I
D
= 80A
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4
2.5
2.9
2.1
2.5
Max.
V
mΩ
mΩ
Typ.
200
7400
1800
47
110
27
25
Unit
S
pF
pF
pF
V
DS
=25V, f=1 MHz, V
GS
=0
V
DD
=20V, I
D
= 160A
(see Figure 2)
150
nC
nC
nC
Rev3
3/14
Electrical characteristics
STB270N04-1 - STB270N04 - STP270N04
Table 5.
Symbol
t
d(on)
t
r
t
d(off)
t
f
Switching times
Parameter
Turn-on Delay Time
Rise Time
Test Condictions
V
DD
=20 V, I
D
= 80A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 14)
V
DD
=20 V, I
D
= 80A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 14)
Min.
Typ.
22
180
Max.
Unit
ns
ns
Turn-off Delay Time
Fall Time
110
45
ns
ns
Table 6.
Symbol
Source drain diode
Parameter
D²PAK
Test Condictions
Min
Typ.
Max
160
120
640
Unit
A
A
A
I
SD
Source-drain Current
TO-220
I²PAK
D²PAK
I
SDM(1)
V
SD(2)
t
rr
Q
rr
I
RRM
Source-drain Current
(pulsed)
Forward on Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
TO-220
I²PAK
I
SD
=80A, V
GS
=0
I
SD
=160A,
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
O
so
b
te
le
r
P
uc
od
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t(
so
b
-O
di/dt = 100A/µs,
V
DD
=32V, Tj=150°C
te
le
r
P
od
ct
u
s)
(
480
1.5
A
V
ns
nC
A
70
225
3.2
4/14
Rev3
STB270N04-1 - STB270N04 - STP270N04
Electrical characteristics
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Static drain-source on resistance
O
so
b
te
le
r
P
uc
od
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t(
bs
-O
et
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P
e
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r
s)
t(
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Figure 6.
Normalized B
VDSS
vs temperature
Rev3
5/14
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