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OM5217RT

Description
8 A, SILICON, RECTIFIER DIODE, TO-257AA
Categorysemiconductor    Discrete semiconductor   
File Size17KB,2 Pages
ManufacturerETC
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OM5217RT Overview

8 A, SILICON, RECTIFIER DIODE, TO-257AA

OM5217RT Preview

OM5201ST/RT/DT OM5203ST/RT/DT OM5217ST/RT/DT OM5234ST/RT/DT
OM5202ST/RT/DT OM5216ST/RT/DT OM5233ST/RT/DT
HERMETIC JEDEC TO-257AA HIGH EFFICIENCY,
CENTER-TAP RECTIFIER
16 Amp, 50 To 600 Volts, 35 To 50 ns trr
FEATURES
Very Low Forward Voltage
Very Fast Recovery Time
Hermetic Metal Package, JEDEC TO-257AA Outline
Low Thermal Resistance
Isolated Package
High Surge
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of products in a hermetic package is specifically designed for use at
power switching frequencies in excess of 100 kHz. The series combines two high
efficiency devices into one package, simplifying installation, reducing heat sink
hardware, and the need to obtain matched components. These devices are ideally
suited for Hi-Rel applications where small size and a hermetically sealed package
is required. Common anode configurations are also available. Common cathode
is standard.
ABSOLUTE MAXIMUM RATINGS
(Per Diode) @ 25°C
Peak Inverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to 600 V
Maximum Average D.C. Output Current @ T
C
= 100° C . . . . . . . . . . . . . . . . . . . . 8A
Surge Current (Non-Repetitive 8.3 msec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . - 55° C to + 150° C
X.
3.2
SCHEMATIC
1
2
COMMON
ANODE
1
2
OMXXXXDT
1
2
COMMON
CATHODE
OMXXXXST
3
DOUBLER
MECHANICAL OUTLINE
.420
.410
.200
.190
.045
.035
.665
.645
.537
.527
1
2
3
3
OMXXXXRT
3
.150
.140
.430
.410
.038 MAX.
.750
.500
.005
Common cathode is standard. Contact the factory for performance
characteristics for common anode and doubler.
Z-Tab package also available.
.035
.025
.100 TYP.
.120 TYP.
4 11 R5
Supersedes 1 07 R4
3.2 - 43
OM5201ST/RT/DT - OM5234ST/RT/DT
ELECTRICAL CHARACTERISTICS
(Per Diode)
Type
PIV
Maximum
Forward Voltage
(Volts) @ (1)
T
j
= 25° C
T
j
= 100° C
1.0V @ 8A
.925V @ 8A
Maximum
Reverse Current
@ PIV
T
j
= 25° C T
j
= 100° C
10 µA
500 µA
Maximum Maximum
Reverse
Thermal
Recovery
Resist.
q
Time (2)
Rq
JC
35 nsec
3.8
OM5201XX
OM5202XX
OM5203XX
OM5216XX
OM5217XX
OM5233XX
OM5234XX
50
100
150
200
300
400
600
1.4V @ 8A
1.55V @ 8A
1.1V @ 8A
1.25V @ 8A
20 µA
20 µA
1.0 mA
1.0 mA
50 nsec
50 nsec
2.5
(1) Pulse Test:
Pulse Width = 300µs, Duty Cycle 2.0%.
(2) Measured in Circuit:
I
F
= 0.5 A, I
R
= 1.0 A, I
REC
= 0.25 A
50 V TO 200 V
TYPICAL FORWARD VOLTAGE
OM5201, 5202, 5203, 5216
100
300 V & 400 V
TYPICAL FORWARD VOLTAGE
OM5217, 5233
100
T
J
= 150°C
50
50
100°C
I
F
= INSTANTANEOUS FORWARD CURRENT (AMPS)
30
20
I
F
= INSTANTANEOUS FORWARD CURRENT (AMPS)
25°C
30
20
T
J
= 150°C
10
100°C
10
25°C
5.0
3.0
2.0
5.0
3.0
2.0
1.0
1.0
0.5
0.3
0.2
0.5
0.3
0.2
3.2
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
F
= INSTANTANEOUS VOLTAGE (VOLTS)
V
F
= INSTANTANEOUS VOLTAGE (VOLTS)
TYPICAL REVERSE CURRENT
OM5201, 5202, 5203, 5216
I
R
= REVERSE CURRENT (µA)
T
J
= 150°C
100°C
I
R
= REVERSE CURRENT (µA)
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
0
20
40
60
80
100 120 140 160 180 200
TYPICAL REVERSE CURRENT
OM5217, 5233
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
0
50
100
150 200 250 300 350 400 450 500
T
J
= 150°C
100°C
25°C
25°C
V
R
= REVERSE VOLTAGE (VOLTS)
V
R
= REVERSE VOLTAGE (VOLTS)
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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