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JAN1N6630U

Description
Rectifier Diode, 1 Phase, 1 Element, 1.4A, 900V V(RRM), Silicon, HERMETIC, MELF-B, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size184KB,4 Pages
ManufacturerSENSITRON
Websitehttp://www.sensitron.com/
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JAN1N6630U Overview

Rectifier Diode, 1 Phase, 1 Element, 1.4A, 900V V(RRM), Silicon, HERMETIC, MELF-B, 2 PIN

JAN1N6630U Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSENSITRON
Parts packaging codeMELF
package instructionHERMETIC, MELF-B, 2 PIN
Contacts2
Reach Compliance Codecompliant
Is SamacsysN
applicationULTRA FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.4 V
JESD-30 codeO-LELF-R2
Maximum non-repetitive peak forward current75 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current1.4 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusQualified
GuidelineMIL
Maximum repetitive peak reverse voltage900 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
SENSITRON
___
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5077, REV. B.1
1N6626 thru 1N6631
Standard
ULTRAFAST RECTIFIERS
A
V AI L AB L E AS
1 N , J AN , J AN T X , J ANT XV
JANS
JAN EQUIVALENT *
SJ*, SX*, SV*
SS
Standard Recovery Rectifiers
Qualified per MIL-PRF-19500/590
DESCRIPTION:
This voidless hermetically sealed standard recovery rectifier diode series is military qualified per
MIL-PRF-19500/590 and is targeted for space, commerical and military aircraft, military vehicles,
shipboard markets and all high reliability applications.
FEATURES / BENEFITS:
Hermetic, non-cavity glass package
Category I Metallurgically bonded
Parts are hot solder dipped
JAN/ JANTX/ JANTXV available per MIL-PRF-
19500/590
MAXIMUM RATINGS
Operating and Storage Temperature: -65 C to
+175 C
Junction Temperature: -65 C to +155 C
o
o
o
o
ELECTRICAL CHARACTERISTICS
Rating
WORKING PEAK REVERSE VOLTAGE
1N6626, U, US
1N6627, U ,US
1N6628, U, US
1N6629, U, US
1N6630 ,U, US
ICONDUCTOR
1N6631, U, US
AVERAGE RECTIFIED FORWARD CURRENT
1N6626 thru 1N6628
1N6629 thru 1N6631
TECHNICAL DATA
AVERAGE RECTIFIED FORWARD CURRENT
DATA SHEET 5077,
US thru 1N6628U, US
1N6626U,
REV. B
1N6629U, US thru 1N6631U, US
PEAK FORWARD SURGE CURRENT
1N6626, U, US thru 1N6630,U, US
1N6631, U, US
MAXIMUM REVERSE CURRENT
1N6626, U, US thru 1N6630,U, US
1N6631, U, US
MAXIMUM REVERSE CURRENT
1N6626, U, US thru 1N6630,U, US
1N6631, U, US
Symbol
Condition
Max
200
400
600
800
900
1000
T
L
= 75 C
o
o
Units
V
RWM
Volts
I
o
2.3
1.8
4.0
2.8
75
60
2.0
4.0
500
600
Amps
I
o
T
EC
= 110 C
Amps
I
FSM
T
p
=8.3ms
o
A(pk)
Amps
Amps
I
R
@ V
RWM
T
j
= 25 C
o
I
R
@ V
RWM
T
j
= 150 C
*Sensitron equivalent diodes are manufactured and screened to MIL-PRF-19500 flow and guidelines starting from
wafer fabrication through assembly and testing using our internal specification.
©2013 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798
www.sensitron.com
sales@sensitron.com
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