NAND256-M
NAND512-M, NAND01G-M
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND
Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
Features
■
Multi-Chip Packages
– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND
Flash + 1 die of 256 Mb (x16) SDR
LPSDRAM
– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND
Flash + 2 dice of 256 Mb (x16) SDR
LPSDRAMs
– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND
Flash +1 die of 256 Mb (x16) DDR
LPSDRAM
– 1 die of 512 Mb (x16) NAND Flash + 1 die
of 256 Mb or 512 Mb (x16) DDR LPSDRAM
Supply voltages
– V
DDF
= 1.7V to 1.95V or 2.5V to 3.6V
– V
DDD
= V
DDQD
= 1.7V to 1.9V
Electronic Signature
ECOPACK
®
packages
Temperature range
– -30 to 85°C
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■
FBGA
TFBGA107 10.5 x 13 x 1.2mm
TFBGA149 10 x 13.5 x 1.2mm
LFBGA137 10.5 x 13 x 1.4mm
TFBGA137 10.5 x 13 x 1.2 mm
(1)
■
(1) Preliminary specifications.
■
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■
Fast Block Erase
– Block erase time: 2ms (typ)
Status Register
Data integrity
– 100,000 Program/Erase cycles
– 10 years Data Retention
Flash Memory
■
NAND Interface
– x8 or x16 bus width
– Multiplexed Address/ Data
Page size
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
Block size
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
Page Read/Program
– Random access: 15µs (max)
– Sequential access: 50ns (min)
– Page program time: 200µs (typ)
Copy Back Program mode
– Fast page copy without external buffering
LPSDRAM
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Interface: x16 or x 32 bus width
Deep Power Down mode
1.8v LVCMOS interface
Quad internal Banks controlled by BA0 and
BA1
Automatic and controlled Precharge
Auto Refresh and Self Refresh
– 8,192 Refresh cycles/64ms
– Programmable Partial Array Self Refresh
– Auto Temperature Compensated Self
Refresh
Wrap sequence: sequential/interleave
Burst Termination by Burst Stop command and
Precharge command
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August 2006
Rev 5
1/23
www.st.com
2
NAND256-M, NAND512-M, NAND01G-M
Table 1.
Reference
Product List
Part Number
NAND256R3M0
NAND Product
256 Mbit (x8), 1.8V
256Mbit (x16) 1.8V
256Mbit (x16) 3V
LPSDRAM Product
256 Mbit SDR, (x16), 1.8V, 104MHz
256 Mbit DDR (x16) 1.8V, 133MHz
256 Mbit SDR (x16), 1.8V, 104MHz
256 Mbit SDR (x16), 1.8V, 104MHz
512 Mbit (x8), 1.8V
256 Mbit DDR (x16) 1.8V, 133MHz
512 Mbit DDR (x16) 1.8V, 133MHz
512Mbit (x8) 3V
2 x 512Mbit NAND (x8) 3V
512Mbit SDR (2x16) (2x256Mbit
SDR x16) 1.8V,104Mhz
512 Mbit SDR (2x16) (2 x 256Mbit
SDR x16) 1.8V, 104MHz
512Mbit SDR (x32) 1.8V, 133MHz
Package
TFBGA107
TFBGA149
TFBGA149
TFBGA107
TFBGA149
TFBGA149
LFBGA 137
LFBGA137
TFBGA137
NAND256-M
NAND256R4M3
NAND256W3M4
NAND512R3M0
NAND512R4M3
NAND512-M
NAND512R4M5
NAND512W3M2
NAND01G-M
NAND01GW3M2
1 Gbit NAND (x8) 3V
2/23
NAND256-M, NAND512-M, NAND01G-M
Contents
Contents
1
Summary description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
NAND Flash Component . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
LPSDRAM Component . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
3
4
5
Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Package Mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Part Numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3/23
List of tables
NAND256-M, NAND512-M, NAND01G-M
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Product List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Signal Names: NAND Flash & 1 x SDR LPSDRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Signal Names: NAND Flash & 2 x SDR LPSDRAMs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Signal Names - NAND Flash & DDR LPSDRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
TFBGA107 10.5x13mm - 10x14 active ball array, 0.80mm pitch, Mechanical Data. . . . . . 17
TFBGA149 10x13.5mm - 12x16 active ball array, 0.80mm pitch, Mechanical Data. . . . . . 18
LFBGA137 10.5x13mm - 10x13 active ball array, 0.8mm pitch- Mechanical Data. . . . . . . 19
TFBGA137 10.5x13mm - 10x13 active ball array, 0.80mm pitch . . . . . . . . . . . . . . . . . . . . 20
Ordering Information Scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
4/23
NAND256-M, NAND512-M, NAND01G-M
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Logic Diagram: NAND Flash & 1 x SDR LPSDRAM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Logic Diagram: NAND Flash & 2 x SDR LPSDRAMs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Logic Diagram: NAND Flash & DDR LPSDRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
TFBGA107 Connections (Top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
TFBGA149 Connections (Top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
LFBGA137 and TFBGA137 Connections (Top view through package) . . . . . . . . . . . . . . . 15
TFBGA107 10.5x13mm - 10x14 active ball array, 0.80mm pitch, Bottom Outline . . . . . . . 17
TFBGA149 10x13.5mm - 12x16 active ball array, 0.80mm pitch, Bottom Outline . . . . . . . 18
LFBGA137 10.5x13mm - 10x13 active ball array, 0.8mm pitch- Bottom Outline . . . . . . . . 19
TFBGA137 10.5x13mm - 10x13 active ball array, 0.8mm pitch- Bottom Outline . . . . . . . . 20
5/23
京公网安备 11010802033920号
EEWORLD
