LAB
MECHANICAL DATA
Dimensions in mm (inches)
SEME
2N2907ACSM
HIGH SPEED, MEDIUM POWER, PNP
SWITCHING TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
0.51 ± 0.10
(0.02 ± 0.004)
0.31 rad.
(0.012)
• SILICON PLANAR EPITAXIAL PNP
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
A
2.54 ± 0.13
(0.10 ± 0.005)
3
2
1
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
A=
0.31 rad.
(0.012)
0.76 ± 0.15
(0.03 ± 0.006)
• HIGH SPEED SATURATED SWITCHING
1.40
(0.055)
max.
1.02 ± 0.10
(0.04 ± 0.004)
APPLICATIONS:
SOT23 CERAMIC
(LCC1 PACKAGE)
PAD 1 – Base
Underside View
PAD 2 – Emitter PAD 3 – Collector
Hermetically sealed surface mount version
of the popular 2N2907A for high reliability /
space applications requiring small size
and low weight devices.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
R
ja
T
stg,
T
j
Semelab plc.
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current
Total Device Dissipation
Derate above 50°C
Thermal Resistance Junction to Ambient
Storage Temperature, Operating Temp Range
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
–60V
–60V
–5V
600mA
350mW
2.0mW / °C
350°C / W
–55 to 200°C
Prelim.3/00
LAB
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
V
CEO(sus)*
V
(BR)CBO*
V
(BR)EBO*
I
CEX*
I
CBO*
I
BEO
V
CE(sat)*
V
BE(sat)*
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cut-off Current
Collector – Base Cut-off Current
Base Cut-off Current
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
SEME
2N2907ACSM
Test Conditions
I
C
= 10mA
I
C
= 10
m
A
I
E
= 10
m
A
V
CE
= 30V
I
E
= 0
T
C
= 125°C
V
CE
= 30V
I
C
= 150mA
I
C
= 500mA
I
C
= 150mA
I
C
= 500mA
I
C
= 0.1mA
I
C
= 1mA
V
BE
= 0.5V
I
B
= 15mA
I
B
= 50mA
I
B
= 15mA
I
B
= 50mA
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
I
C
= 0
V
BE
= 0.5V
V
CB
= 50V
Min.
–60
–60
–5
Typ.
Max. Unit
V
V
V
50
0.01
10
50
–0.4
–1.6
–1.3
–2.6
m
nA
A
nA
V
V
75
100
100
100
50
300
—
h
FE*
DC Current Gain
I
C
= 10mA
I
C
= 150mA
I
C
= 500mA
* Pulse test t
p
= 300
m
s ,
d £
2%
DYNAMIC CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
f
T
C
ob
C
ib
Transition Frequency
Output Capacitance
Input Capacitance
Test Conditions
I
C
= 50mA
V
CB
= 10V
V
BE
= 2V
V
CE
= 20V
I
E
= 0
I
C
= 0
f = 100MHz
f = 1.0MHz
f = 1.0MHz
Min.
200
Typ.
Max. Unit
MHz
8
30
pF
pF
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
t
on
t
d
t
r
t
off
t
s
t
f
Turn-on Time
Delay Time
Rise Time
Turn-off Time
Storage Time
Fall Time
Test Conditions
V
CC
= 30V
I
C
= 150mA
I
B1
= 15mA
V
CC
= 6V
I
C
= 150mA
I
B1
= I
B2
= 15mA
Min.
Typ.
26
6.0
20
70
50
20
Max. Unit
45
10
40
100
80
30
ns
ns
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim.3/00
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