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STM32H745ZI

Description
High-performance dual-core ARM Cortex-M7 + Cortex-M4 MCU with DSP and DP-FPU with 2 MB Flash, 1 MB RAM, 480 MHz CPU, ART accelerator, L1 cache, external memory interface, extensive peripherals and SMPS
File Size3MB,252 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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STM32H745ZI Overview

High-performance dual-core ARM Cortex-M7 + Cortex-M4 MCU with DSP and DP-FPU with 2 MB Flash, 1 MB RAM, 480 MHz CPU, ART accelerator, L1 cache, external memory interface, extensive peripherals and SMPS

STM32H745xI/G
Dual 32-bit Arm
®
Cortex
®
-M7 up to 480MHz and -M4 MCUs,
up to 2MB Flash, 1MB RAM, 46 com. and analog interfaces, SMPS
Datasheet
-
production data
Features
Dual core
32-bit
core with double-
precision FPU and L1 cache: 16 Kbytes of data
and 16 Kbytes of instruction cache; frequency
up to 480 MHz, MPU, 1027 DMIPS/
2.14 DMIPS/MHz (Dhrystone 2.1), and DSP
instructions
32-bit Arm
®
32-bit Cortex
®
-M4 core with FPU,
Adaptive real-time accelerator (ART
Accelerator™) for internal Flash memory and
external memories, frequency up to 240 MHz,
MPU, 300 DMIPS/1.25 DMIPS /MHz
(Dhrystone 2.1), and DSP instructions
Arm
®
Cortex
®
-M7
LQFP144
(20x20 mm)
LQFP176
(24x24 mm)
LQFP208
(28x28 mm)
FBGA
FBGA
TFBGA240+25
(14x14 mm)
UFBGA176+25
(10x10 mm)
Reset and power management
3 separate power domains which can be
independently clock-gated or switched off:
– D1: high-performance capabilities
– D2: communication peripherals and timers
– D3: reset/clock control/power management
1.62 to 3.6 V application supply and I/Os
POR, PDR, PVD and BOR
Dedicated USB power embedding a 3.3 V
internal regulator to supply the internal PHYs
Embedded regulator (LDO) to supply the digital
circuitry
High power-efficiency SMPS step-down
converter regulator to directly supply V
CORE
and/or external circuitry
Voltage scaling in Run and Stop mode (6
configurable ranges)
Backup regulator (~0.9 V)
Voltage reference for analog peripheral/V
REF+
1.2 to 3.6 V V
BAT
supply
Low-power modes: Sleep, Stop, Standby and
V
BAT
supporting battery charging
Memories
Up to 2 Mbytes of Flash memory with read-
while-write support
1 Mbyte of RAM: 192 Kbytes of TCM RAM (inc.
64 Kbytes of ITCM RAM + 128 Kbytes of
DTCM RAM for time critical routines),
864 Kbytes of user SRAM, and 4 Kbytes of
SRAM in Backup domain
Dual mode Quad-SPI memory interface
running up to 133 MHz
Flexible external memory controller with up to
32-bit data bus: SRAM, PSRAM,
SDRAM/LPSDR SDRAM, NOR/NAND Flash
memory clocked up to 125 MHz in
Synchronous mode
CRC calculation unit
Security
ROP, PC-ROP, active tamper
Low-power consumption
V
BAT
battery operating mode with charging
capability
CPU and domain power state monitoring pins
2.95 µA in Standby mode (Backup SRAM OFF,
RTC/LSE ON)
General-purpose input/outputs
Up to 168 I/O ports with interrupt capability
May 2019
This is information on a product in full production.
DS12923 Rev 1
1/252
www.st.com

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