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M58BW016BT100ZA6FT

Description
512KX32 FLASH 3V PROM, 100ns, PBGA80, 10 X 12 MM, 1 MM PITCH, LBGA-80
Categorystorage    storage   
File Size902KB,63 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

M58BW016BT100ZA6FT Overview

512KX32 FLASH 3V PROM, 100ns, PBGA80, 10 X 12 MM, 1 MM PITCH, LBGA-80

M58BW016BT100ZA6FT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeBGA
package instruction10 X 12 MM, 1 MM PITCH, LBGA-80
Contacts80
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Maximum access time100 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK
startup blockTOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B80
JESD-609 codee1
length12 mm
memory density16777216 bit
Memory IC TypeFLASH
memory width32
Number of functions1
Number of departments/size8,31
Number of terminals80
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX32
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA80,8X10,40
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
power supply2.5/3.3,3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.7 mm
Department size2K,16K
Maximum standby current0.000005 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
switch bitNO
typeNOR TYPE
width10 mm
Base Number Matches1
M58BW016BT, M58BW016BB
M58BW016DT, M58BW016DB
16 Mbit (512Kb x32, Boot Block, Burst)
3V Supply Flash Memories
FEATURES SUMMARY
s
SUPPLY VOLTAGE
– V
DD
= 2.7V to 3.6V for Program, Erase and
Read
– V
DDQ
= V
DDQIN
= 2.4V to 3.6V for I/O Buffers
– V
PP
= 12V for fast Program (optional)
s
Figure 1. Packages
HIGH PERFORMANCE
– Access Time: 80, 90 and 100ns
– 56MHz Effective Zero Wait-State Burst Read
– Synchronous Burst Reads
– Asynchronous Page Reads
PQFP80 (T)
s
HARDWARE BLOCK PROTECTION
– WP pin Lock Program and Erase
BGA
s
SOFTWARE BLOCK PROTECTION
– Tuning Protection to Lock Program and
Erase with 64 bit User Programmable Pass-
word (M58BW016B version only)
LBGA80 (ZA)
10 x 8 ball array
s
OPTIMIZED for FDI DRIVERS
– Fast Program / Erase suspend latency
time < 6µs
– Common Flash Interface
s
MEMORY BLOCKS
– 8 Parameters Blocks (Top or Bottom)
– 31 Main Blocks
s
LOW POWER CONSUMPTION
– 5µA Typical Deep Power Down
– 60µA Typical Standby
– Automatic Standby after Asynchronous Read
s
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code M58BW016xT: 8836h
– Bottom Device Code M58BW016xB: 8835h
October 2003
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