PN4355J18Z datasheet, PDF - EEWORLD Datasheet

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PN4355J18Z: DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size461KB，10 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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PN4355J18Z Overview

Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN

PN4355J18Z Parametric

Parameter Name	Attribute value
Maker	Fairchild
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	75
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	400 ns
Maximum opening time (tons)	100 ns
Base Number Matches	1

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PN4355 / MMBT4355

PN4355

MMBT4355

TO-92

SOT-23

Mark: 81

PNP General Purpose Amplifier

This device is designed for use as a general purpose amplifier

and switch requiring collector currents to 500 mA. Sourced

from Process 67. See TN4033A for characteristics.

Absolute Maximum Ratings*

Symbol

CEO

CBO

EBO

, T

stg

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

TA = 25°C unless otherwise noted

Parameter

Collector-Emitter Voltage

Value

800

-55 to +150

Units

°C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

These ratings are based on a maximum junction temperature of 150 degrees C.

These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

θJC

θJA

TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

PN4355

625

5.0

83.3

200

Max

*MMBT4355

350

2.8

357

Units

mW/°C

°C/W

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."



2001 Fairchild Semiconductor Corporation

PN4355/MMBT4355, Rev A

PN4355J18Z Related Products

	PN4355J18Z	PN4355J05Z	PN4355D75Z	PN4355D74Z	PN4355D26Z	PN4355D27Z	MMBT4355D87Z
Description	Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
Maker	Fairchild	Fairchild	Fairchild	Fairchild	Fairchild	Fairchild	Fairchild
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown	unknown	compliant	compliant	compliant	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A
Collector-emitter maximum voltage	60 V	60 V	60 V	60 V	60 V	60 V	60 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	75	75	75	75	75	75	75
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	R-PDSO-G3
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	RECTANGULAR
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	YES
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	GULL WING
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maximum off time (toff)	400 ns	400 ns	400 ns	400 ns	400 ns	400 ns	400 ns
Maximum opening time (tons)	100 ns	100 ns	100 ns	100 ns	100 ns	100 ns	100 ns
Is Samacsys	N	N	N	N	-	-	-
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	-
Base Number Matches	1	1	1	1	-	-	-

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