Technical Data
Data Sheet N0760, Rev. B
MBR20100WT
MBR20100WT SCHOTTKY RECTIFIER
Features
150
C
T
J
operation
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
TO-247AD
Circuit Diagram
Applications
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Center tap configuration
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive Surge
Current(Per Leg)
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FSM
Condition
-
50% duty cycle @Tc=133°C,
rectangular wave form
8.3ms, Half Sine pulse
Max.
100
10(Per Leg)
20(Per Device)
150
Units
V
A
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop
(Per Leg)*
Reverse Current
(Per Leg)*
Junction Capacitance(Per Leg)
Voltage Rate of Change
* Pulse width < 300 µs, duty cycle < 2%
Symbol
V
F1
V
F2
I
R1
I
R2
C
T
dv/dt
Condition
@ 10A, Pulse, T
J
= 25
C
@ 10A, Pulse, T
J
= 125
C
@V
R
= rated VR Pulse
T
J
= 25
C
@V
R
= rated VR , Pulse
T
J
= 125
C
@V
R
= 5V, T
C
= 25
C
f
SIG
= 1MHz
-
Typ.
0.83
0.72
0.0007
0.1
300
-
Max.
0.85
0.75
1.0
6.0
500
10,000
Units
V
V
mA
mA
pF
V/s
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Technical Data
Data Sheet N0760, Rev. B
MBR20100WT
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Typical Thermal Resistance Case to
heatsink
Approximate Weight
Case Style
Symbol
T
J
T
stg
R
JCH
wt
Condition
DC operation
-
-
-
Specification
-55 to +150
-55 to +150
2
6.28
Units
C
C
C/W
g
TO-247AD
Ratings and Characteristics Curves
10000
Junction Capacitance-CT(PF)
1
0.1
Reverse Current-IR(MA)
1000
TJ=25℃
100
0.01
0.001
0.0001
0.00001
TJ=125℃
TJ=25℃
10
0
5
10
15
20
25
30
35
40
Reverse Voltage-VR(V)
10
20
30
40
50
60
70
80
90 100
Reverse Voltage-VR(V)
Fig.1-Typical Junction Capacitance
Fig.2-Typical Reverse Characteristics
Instantaneous Forward Current-
IF(A)
100
10
TJ=125℃
TJ=25℃
1
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
Forward Voltage Drop-VF(V)
Fig.3-Typical Instantaneous Forward Voltage Characteristics
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Technical Data
Data Sheet N0760, Rev. B
MBR20100WT
Mechanical Dimensions TO-247AD
SYMBOL
A
A1
A2
b
b1
b2
c
D
D1
D2
E
E1
E2
E3
e
L
L1
P
P1
P2
Q
S
T
U
Millimeters
MIN.
4.80
2.20
1.90
1.10
1.80
2.80
0.50
20.30
15.45
TYP.
5.00
2.41
2.00
1.20
2.00
3.00
0.60
21.00
16.55
1.20
15.80
13.30
5.00
2.50
5.44
19.92
4.13
3.60
2.50
5.80
6.15
10.00
6.20
MAX.
5.20
2.61
2.10
1.40
2.20
3.20
0.75
21.20
16.00
19.42
3.50
7.1
6.05
20.70
3.70
7.40
6.25
Ordering Information:
Device
MBR20100WT
Package
TO-247AD(Pb-Free)
Shipping
25pcs / tube
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging
specification.
Tube Specification
Marking Diagram
Where XXXXX is YYWWL
MBR
20
100
WT
SSG
YY
WW
L
= Device Type
= Forward Current (20A)
= Reverse Voltage (100V)
= Configuration
= SSG
= Year
= Week
= Lot Number
Cautions：Molding
resin
Epoxy resin UL:94V-0
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Technical Data
Data Sheet N0760, Rev. B
MBR20100WT
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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