0.13µm Process
ADVANCE
‡
36Mb: 2 MEG x 18, 1 MEG x 32/36
FLOW-THROUGH ZBT SRAM
36Mb ZBT
®
SRAM
Features
• High frequency and 100 percent bus utilization
• Single 3.3V ±5 percent or 2.5V ±5 percent power supply
• Separate 3.3V ±5 percent or 2.5V ±5 percent isolated
output buffer supply (V
DD
Q)
• Advanced control logic for minimum control signal
interface
• Individual BYTE WRITE controls may be tied LOW
• Single R/W# (read/write) control pin/ball
• CKE# pin/ball to enable clock and suspend operations
• Three chip enables for simple depth expansion
• Clock-controlled and registered addresses, data
I/Os, and control signals
• Internally self-timed, fully coherent WRITE
• Internally self-timed, registered outputs to eliminate
the need to control OE#
• SNOOZE MODE for reduced-power standby
• Common data inputs and data outputs
• Linear or Interleaved Burst Modes
• Burst feature (optional)
• Pin and ball/function compatibility with 2Mb, 4Mb,
8Mb, and 18Mb ZBT SRA
M
• Automatic power down
MT55L2MY18F, MT55V2MV18F,
MT55L1MY32F, MT55V1MV32F,
MT55L1MY36F, MT55V1MV36F
3.3V V
DD
, 3.3V or 2.5V I/O; 2.5V V
DD
, 2.5V I/O
Figure 1: 100-Pin TQFP
JEDEC-Standard MS-026 BHA (LQFP)
Figure 2: 165-Ball FBGA
JEDEC-Standard MO-216 (Var. CAB-1)
Options
• Timing (Access/Cycle/MHz)
6.5ns/8.8ns/113 MHz
7.5ns/10ns/100 MHz
8.5ns/11ns/90 MHz
• Configurations
3.3V V
DD
, 3.3V or 2.5V I/O
2 Meg x 18
1 Meg x 32
1 Meg x 36
2.5V V
DD
, 2.5V I/O
2 Meg x 18
1 Meg x 32
1 Meg x 36
• Packages
100-pin, 16mm x 22.1mm TQFP
165-ball, 13mm x 15mm FBGA
• Operating Temperature Range
Commercial (0ºC
£
T
A
£
+70ºC)
Industrial (-40ºC
£
T
A
£
+85ºC)
NOTE:
TQFP
Marking
-8.8
-10
-11
MT55L2MY18F
MT55L1MY32F
MT55L1MY36F
MT55V2MV18F
MT55V1MV32F
MT55V1MV36F
T
F
1
None
IT
2
Part Number Example:
MT55L1MY36FT-11
General Description
The Micron
®
Zero Bus Turnaround
™
(ZBT
®
) SRAM
family employs high-speed, low-power CMOS designs
using an advanced CMOS process.
Micron’s 36Mb ZBT SRAMs integrate a 2 Meg x 18, 1
Meg x 32, or 1 Meg x 36 SRAM core with advanced syn-
chronous peripheral circuitry and a 2-bit burst
counter. These SRAMs are optimized for 100 percent
bus utilization, eliminating any turnaround cycles for
READ to WRITE, or WRITE to READ, transitions. All
synchronous inputs pass through registers controlled
1. A Part Marking Guide for the FBGA devices can be found on
Micron’s Web site—http://www.micron.com/numberguide.
2. Contact factory for availability of Industrial Temperature devices.
36Mb: 2 Meg x 18, 1 Meg x 32/36 Flow-through ZBT SRAM
MT55L2MY18F_16_B.fm - Rev. B, Pub. 1/03
1
©2003, Micron Technology Inc.
‡
PRODUCTS
AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.
0.13µm Process
ADVANCE
36Mb: 2 MEG x 18, 1 MEG x 32/36
FLOW-THROUGH ZBT SRAM
by a positive-edge-triggered single clock input (CLK).
The synchronous inputs include all addresses, all data
inputs, chip enable (CE#), two additional chip enables
for easy depth expansion (CE2, CE2#), cycle start input
(ADV/LD#), synchronous clock enable (CKE#), byte
write enables (BWa#, BWb#, BWc#, and BWd#), and
read/write (R/W#).
Asynchronous inputs include the output enable
(OE#, which may be tied LOW for control signal mini-
mization), clock (CLK) and snooze enable (ZZ, which
may be tied LOW if unused). There is also a burst mode
pin/ball (MODE) that selects between interleaved and
linear burst modes. MODE may be tied HIGH, LOW or
left unconnected if burst is unused. The flow-through
data-out (Q) is enabled by OE#. WRITE cycles can be
from one to four bytes wide as controlled by the write
control inputs.
All READ, WRITE, and DESELECT cycles are initi-
ated by the ADV/LD# input. Subsequent burst
addresses can be internally generated as controlled by
the burst advance pin (ADV/LD#). Use of burst mode is
optional. It is allowable to give an address for each
individual READ and WRITE cycle. BURST cycles wrap
around after the fourth access from a base address.
To allow for continuous, 100 percent use of the data
bus, the flow-through ZBT SRAM uses a LATE WRITE
cycle. For example, if a WRITE cycle begins in clock
cycle one, the address is present on rising edge one.
BYTE WRITEs need to be asserted on the same cycle as
the address. The write data associated with the address
is required one cycle later, or on the rising edge of
clock cycle two.
Address and write control are registered on-chip to
simplify WRITE cycles. This allows self-timed WRITE
cycles. Individual byte enables allow individual bytes
to be written. During a BYTE WRITE cycle, BWa# con-
trols DQa pins/balls; BWb# controls DQb pins/balls;
BWc# controls DQc pins/balls; and BWd# controls
DQd pins/balls. Cycle types can only be defined when
an address is loaded, i.e., when ADV/LD# is LOW. Par-
ity/ECC bits are only available on the x18 and x36 ver-
sions.
Micron’s 36Mb ZBT SRAMs operate from 3.3V or
2.5V V
DD
power supply, and all inputs and outputs are
LVTTL-compatible. Users can use either a 3.3V or 2.5V
I/O, depending on the V
DD
voltage. The device is ide-
ally suited for systems requiring high bandwidth and
zero bus turnaround delays.
Please refer to Micron’s Web site (www.micron.com/
sramds)
for the latest data sheet.
Dual Voltage I/O
The 3.3V V
DD
device is tested for 3.3V and 2.5V I/O
function. The 2.5V V
DD
device is tested for only
2.5V I/O function.
36Mb: 2 Meg x 18, 1 Meg x 32/36 Flow-through ZBT SRAM
MT55L2MY18F_16_B.fm - Rev. B, Pub. 1/03
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003, Micron Technology Inc.
0.13µm Process
ADVANCE
36Mb: 2 MEG x 18, 1 MEG x 32/36
FLOW-THROUGH ZBT SRAM
Figure 3: Functional Block Diagram
2 Meg x 18
21
SA0, SA1, SA
MODE
CLK
CKE#
K
CE
ADV/LD#
K
WRITE ADDRESS
REGISTER
ADDRESS
REGISTER
21
SA1
D1
SA0
D0
19
Q1 SA1'
SA0'
Q0
21
22
O
U
T
P
U
T
B
U
F
F
E
R
S
E
21
BURST
LOGIC
ADV/LD#
BWa#
BWb#
R/W#
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
18
2 Meg x 9 x 2
WRITE
DRIVERS
18
MEMORY
ARRAY
18
S
E
N
S
E
A
M
P
S
D
A
T
A
18
S
T
E
E
R
I
N
G
18
18
DQs
DQPa
DQPb
18
OE#
CE#
CE2
CE2#
INPUT
REGISTER E
READ LOGIC
Figure 4: Functional Block Diagram
1 Meg x 32/36
20
SA0, SA1, SA
MODE
CLK
CKE#
K
CE
ADV/LD#
K
WRITE ADDRESS
REGISTER
ADDRESS
REGISTER
20
SA1
D1
SA0
D0
18
Q1 SA1'
SA0'
Q0
20
20
O
U
T
P
U
T
B
U
F
F
E
R
S
E
20
BURST
LOGIC
ADV/LD#
BWa#
BWb#
BWc#
BWd#
R/W#
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
36
1 Meg x 8 x 4
(x32)
WRITE
DRIVERS
36
1 Meg x 9 x 4
(x36)
MEMORY
ARRAY
36
S
E
N
S
E
A
M
P
S
D
A
T
A
36
S
T
E
E
R
I
N
G
36
36
DQs
DQPa
DQPb
DQPc
DQPd
36
OE#
CE#
CE2
CE2#
INPUT
E
REGISTER
READ LOGIC
NOTE:
Functional block diagrams illustrate simplified device operation. See truth tables, pin/ball descriptions, and tim-
ing diagrams for detailed information.
36Mb: 2 Meg x 18, 1 Meg x 32/36 Flow-through ZBT SRAM
MT55L2MY18F_16_B.fm - Rev. B, Pub. 1/03
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003, Micron Technology Inc.
0.13µm Process
ADVANCE
36Mb: 2 MEG x 18, 1 MEG x 32/36
FLOW-THROUGH ZBT SRAM
Figure 5: Pin Layout (Top View)
100-Pin TQFP
SA
NC
NC
V
DD
Q
V
SS
NC
DQa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
V
SS
V
SS
2
V
DD
ZZ
DQa
DQa
V
DD
Q
V
SS
DQa
DQa
NC
NC
V
SS
V
DD
Q
NC
NC
NC
SA
SA
SA
SA
ADV/LD#
OE# (G#)
CKE#
R/W#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
NC
NC
CE2
CE#
SA
SA
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
50
81
49
82
48
83
47
84
46
85
45
86
44
87
43
88
42
89
41
90
40
91
39
92
38
93
37
94
36
95
35
96
34
97
33
98
32
99
31
100
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
x18
SA
SA
SA
SA
SA
SA
SA
SA
DNU
4
V
DD
V
SS
DNU
DNU
SA0
SA1
SA
SA
SA
SA
MODE
(LBO#)
SA
SA
SA
SA
ADV/LD#
OE# (G#)
CKE#
R/W#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
BWc#
BWd#
CE2
CE#
SA
SA
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
50
81
49
82
48
83
47
84
46
85
45
86
44
87
43
88
42
89
41
90
40
91
39
92
38
93
37
94
36
95
35
96
34
97
33
98
32
99
31
100
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
NF/DQPb
1
DQb
DQb
V
DD
Q
V
SS
DQb
DQb
DQb
DQb
V
SS
V
DD
Q
DQb
DQb
V
SS
V
SS
2
V
DD
ZZ
DQa
DQa
V
DD
Q
V
SS
DQa
DQa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
NF/DQPa
1
NC
NC
NC
V
DD
Q
V
SS
NC
NC
DQb
DQb
V
SS
V
DD
Q
DQb
DQb
V
SS
2
V
DD
V
DD
3
V
SS
DQb
DQb
V
DD
Q
V
SS
DQb
DQb
DQb
NC
V
SS
V
DD
Q
NC
NC
NC
x32/x36
SA
SA
SA
SA
SA
SA
SA
SA
DNU
4
V
DD
V
SS
DNU
DNU
SA0
SA1
SA
SA
SA
SA
MODE
(LBO#)
NOTE:
1. NF for x32 version, DQPx for x36 version.
2. Pins 14 and 66 do not have to be connected directly to V
SS
if another logic level can be applied that is
£
V
IL
.
3. Pin 16 does not have to be connected directly to V
DD
if another logic level can be applied that is
³
V
IH
.
4. Pin 42 isreserved for 72Mb address expansion.
36Mb: 2 Meg x 18, 1 Meg x 32/36 Flow-through ZBT SRAM
MT55L2MY18F_16_B.fm - Rev. B, Pub. 1/03
NF/DQPc
1
DQc
DQc
V
DD
Q
V
SS
DQc
DQc
DQc
DQc
V
SS
V
DD
Q
DQc
DQc
V
SS
2
V
DD
V
DD
3
V
SS
DQd
DQd
V
DD
Q
V
SS
DQd
DQd
DQd
DQd
V
SS
V
DD
Q
DQd
DQd
NF/DQPd
1
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003, Micron Technology Inc.
0.13µm Process
ADVANCE
36Mb: 2 MEG x 18, 1 MEG x 32/36
FLOW-THROUGH ZBT SRAM
Table 1:
SYMBOL
ADV/LD#
TQFP Pin Descriptions
TYPE
Input
DESCRIPTION
Synchronous Address Advance/Load: When HIGH, this input is used to advance the internal
burst counter, controlling burst access after the external address is loaded. When ADV/LD# is
HIGH, R/W# is ignored. A LOW on ADV/LD# clocks a new address at the CLK rising edge.
Synchronous Byte Write Enables: These active LOW inputs allow individual bytes to be
written when a WRITE cycle is active and must meet the setup and hold times around the
rising edge of CLK. BYTE WRITEs need to be asserted on the same cycle as the address. BWa#
controls DQa pins; BWb# controls DQb pins; BWc# controls DQc pins; BWd# controls DQd
pins. Parity is only available on the x18 and x36 versions.
Synchronous Chip Enable: This active LOW input is used to enable the device and is sampled
only when a new external address is loaded (ADV/LD# LOW).
Synchronous Chip Enable: This active LOW input is used to enable the device and is sampled
only when a new external address is loaded (ADV/LD# LOW). This input can be used for
memory depth expansion.
Synchronous Chip Enable: This active HIGH input is used to enable the device and is sampled
only when a new external address is loaded (ADV/LD# LOW). This input can be used for
memory depth expansion.
Synchronous Clock Enable: This active LOW input permits CLK to propagate throughout the
device. When CKE is HIGH, the device ignores the CLK input and effectively internally
extends the previous CLK cycle. This input must meet setup and hold times around the rising
edge of CLK.
Clock: This signal registers the address, data, chip enables, byte write enables, and burst
control inputs on its rising edge. All synchronous inputs must meet setup and hold times
around the clock’s rising edge.
SRAM Data I/Os: byte “a” is associated with DQa pins; byte “b” is associated with DQb pins;
byte “c” is associated with DQc pins; byte “d” is associated with DQd pins. Input data must
meet setup and hold times around the rising edge CLK.
Mode: This input selects the burst sequence. A LOW on this pin selects linear burst. NC or
HIGH on this pin selects interleaved burst. Do not alter input state while device is operating.
LBO# is the JEDEC-standard term for MODE.
Output Enable: This active LOW, asynchronous input enables the data I/O output drivers. G#
is the JEDEC-standard term for OE#.
Read/Write: This input determines the cycle type when ADV/LD# is LOW and is the only
means for determining READs and WRITEs. READ cycles may not be converted into WRITEs
(and vice versa) other than by loading a new address. A LOW on this pin permits BYTE WRITE
operations and must meet the setup and hold times around the rising edge of CLK. Full bus-
width WRITEs occur if all byte write enables are LOW.
Synchronous Address Inputs: These inputs are registered and must meet the setup and hold
times around the rising edge of CLK. SA0 and SA1 are the two least significant bits (LSB) of
the address field and set the internal burst counter if burst is desired.
Snooze Enable: This active HIGH, asynchronous input causes the device to enter a low-power
standby mode in which all data in the memory array is retained. When ZZ is active, all other
inputs are ignored. This pin has an internal pull-down and can be left unconnected.
No Function/Parity Data I/Os: On the x32 version, these are No Function (NF). On the x18
version, byte “a” parity is DQPa; byte “b” parity is DQPb. On the x36 version, byte “a” parity
is DQPa; byte “b” parity is DQPb; byte “c” parity is DQPc; byte “d” parity is DQPd. No
Function pins are internally connected to the die and have the capacitance of an input pin. It
is allowable to leave these pins unconnected or driven by signals.
Power Supply: See DC Electrical Characteristics and Operating Conditions for range.
Isolated Output Buffer Supply: See DC Electrical Characteristics and Operating Conditions for
range.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003, Micron Technology Inc.
BWa#
BWb#
BWc#
BWd#
CE#
CE2#
Input
Input
Input
CE2
Input
CKE#
Input
CLK
Input
DQa
DQb
DQc
DQd
MODE (LBO#)
Input/
Output
Input
OE# (G#)
R/W#
Input
Input
SA0
SA1
SA
ZZ
Input
Input
NF/DQPa
NF/DQP
NF/DQPc
NF/DQPd
V
DD
V
DD
Q
NF
I/O
Supply
Supply
36Mb: 2 Meg x 18, 1 Meg x 32/36 Flow-through ZBT SRAM
MT55L2MY18F_16_B.fm - Rev. B, Pub. 1/03
5
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