DISCRETE SEMICONDUCTORS
DATA SHEET
BYW29EB, BYW29ED series
Rectifier diodes
ultrafast, rugged
Product
specification
November 1998
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
BYW29EB, BYW29ED series
SYMBOL
QUICK REFERENCE DATA
V
R
= 150 V/ 200 V
V
F
≤
0.895 V
I
F(AV)
= 8 A
I
RRM
= 0.2 A
t
rr
≤
25 ns
k
tab
a
3
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies.
The BYW29EB series is supplied in the SOT404 surface mounting package.
The BYW29ED series is supplied in the SOT428 surface mounting package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
no connection
cathode
1
anode
cathode
SOT404
tab
SOT428
tab
2
1
3
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
I
RRM
I
RSM
T
j
T
stg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
Peak repetitive reverse
surge current
Peak non-repetitive reverse
surge current
Operating junction
temperature
Storage temperature
square wave;
δ
= 0.5; T
mb
≤
128 ˚C
square wave;
δ
= 0.5; T
mb
≤
128 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied V
RRM(max)
t
p
= 2
µs; δ
= 0.001
t
p
= 100
µs
CONDITIONS
BYW29EB/ BYW29ED
-
-
-
-
-
-
-
-
-
-
- 40
MIN.
-150
150
150
150
8
16
80
88
0.2
0.2
150
150
MAX.
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
1.
It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
November 1998
1
Rev 1.300
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
BYW29EB, BYW29ED series
MIN.
-
MAX.
8
UNIT
kV
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
R
th j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
SOT404 and SOT428 packages, pcb
mounted, minimum footprint, FR4 board
-
TYP. MAX. UNIT
-
50
2.7
-
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V
F
I
R
Q
rr
t
rr1
t
rr2
V
fr
Forward voltage
Reverse current
Reverse recovered charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
CONDITIONS
I
F
= 8 A; T
j
= 150˚C
I
F
= 8 A
I
F
= 20 A
V
R
= V
RWM
V
R
= V
RWM
; T
j
= 100˚C
I
F
= 2 A; V
R
≥
30 V; -dI
F
/dt = 20 A/µs
I
F
= 1 A; V
R
≥
30 V; -dI
F
/dt = 100 A/µs
I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A
I
F
= 1 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
0.8
0.92
1.1
2
0.2
4
20
15
1
0.895
1.05
1.3
10
0.6
11
25
20
-
V
V
V
µA
mA
nC
ns
ns
V
November 1998
2
Rev 1.300
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29EB, BYW29ED series
I
dI
F
dt
F
0.5A
IF
t
rr
time
0A
I rec = 0.25A
IR
trr2
Q
I
R
I
s
10%
100%
rrm
I = 1A
R
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.4. Definition of t
rr2
I
F
12
10
8
PF / W
Vo = 0.791 V
Rs = 0.013 Ohms
BYW29
Tmb(max) / C
108
D = 1.0
115
0.5
122
129
136
143
T
t
time
VF
V
VF
time
fr
6
0.1
4
0.2
I
t
p
D=
t
p
T
2
0
0
2
4
6
IF(AV) / A
8
10
150
12
Fig.2. Definition of V
fr
Fig.5. Maximum forward dissipation P
F
= f(I
F(AV)
);
square current waveform where I
F(AV)
=I
F(RMS)
x
√
D.
PF / W
Vo = 0.791 V
Rs = 0.013 Ohms
R
8
7
6
BYW29
Tmb(max) / C
a = 1.57
1.9
2.2
122
125.5
129
132.5
136
139.5
143
146.5
D.U.T.
Voltage Pulse Source
5
4
3
4
2.8
Current
shunt
2
to ’scope
1
0
0
1
2
3
4
IF(AV) / A
5
6
7
150
8
Fig.3. Circuit schematic for t
rr2
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
November 1998
3
Rev 1.300
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29EB, BYW29ED series
trr / ns
1000
100 Qs / nC
100
IF=10A
IF=10A
5A
2A
1A
10
IF=1A
10
1
1.0
1
10
dIF/dt (A/us)
100
1.0
10
-dIF/dt (A/us)
100
Fig.7. Maximum t
rr
at T
j
= 25 ˚C.
Fig.10. Maximum Q
s
at T
j
= 25 ˚C.
10
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
IF=10A
1
IF=1A
1
0.1
0.1
0.01
P
D
t
p
D=
t
p
T
t
0.01
1
10
-dIF/dt (A/us)
100
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
10s
pulse width, tp (s)
PBYL1025
Fig.8. Maximum I
rrm
at T
j
= 25 ˚C.
Fig.11. Transient thermal impedance; Z
th j-mb
= f(t
p
).
30
IF / A
Tj=150 C
Tj=25 C
BYW29
20
typ
10
max
0
0
0.5
1
VF / V
1.5
2
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
November 1998
4
Rev 1.300
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