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MJ15021G

Description
Complementary Silicon Power Transistors
CategoryDiscrete semiconductor    The transistor   
File Size149KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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MJ15021G Overview

Complementary Silicon Power Transistors

MJ15021G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeTO-3
package instructionLEAD FREE, CASE 1-07, TO-3, 2 PIN
Contacts2
Manufacturer packaging codeCASE 1-07
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)4 A
Collector-emitter maximum voltage250 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)150 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
MJ15020 − NPN
MJ15021 − PNP
Preferred Devices
Complementary Silicon
Power Transistors
These transistors are designed for use as high frequency drivers in
Audio Amplifiers.
Features
http://onsemi.com
High Gain Complementary Silicon Power Transistors
Safe Operating Area 100% Tested 50 V, 3.0 A, 1.0 Sec
Excellent Frequency Response
−f
T
= 20 MHz min
Pb−Free Packages are Available*
4.0 AMPERES
COMPLEMENTARY SILICON-
POWER TRANSISTORS
200
250 VOLTS, 150 WATTS
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Continuous
Base Current
Continuous
Emitter Current
Continuous
Total Device Dissipation @ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
I
E
P
D
T
J
, T
stg
MJ15020
MJ15021
250
250
7.0
4.0
2.0
6.0
150
0.86
−65
to +200
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/_C
_C
MJ1502xG
AYWW
MEX
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
1.17
Unit
_C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MJ1502x = Device Code
x = 0 or 1
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MEX
= Country of Origin
ORDERING INFORMATION
Device
MJ15020
MJ15020G
MJ15021
MJ15021G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Package
TO−204
TO−204
(Pb−Free)
TO−204
TO−204
(Pb−Free)
Shipping
100 Units / Tray
100 Units / Tray
100 Units / Tray
100 Units / Tray
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
August, 2006
Rev. 2
1
Publication Order Number:
MJ15020/D

MJ15021G Related Products

MJ15021G MJ15020 MJ15020G MJ15021
Description Complementary Silicon Power Transistors Complementary Silicon Power Transistors Complementary Silicon Power Transistors Complementary Silicon Power Transistors
Is it Rohs certified? conform to incompatible conform to incompatible
Maker ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Parts packaging code TO-3 TO-3 TO-3 TO-3
package instruction LEAD FREE, CASE 1-07, TO-3, 2 PIN CASE 1-07, TO-3, 2 PIN LEAD FREE, CASE 1-07, TO-3, 2 PIN CASE 1-07, TO-3, 2 PIN
Contacts 2 2 2 2
Manufacturer packaging code CASE 1-07 CASE 1-07 CASE 1-07 CASE 1-07
Reach Compliance Code _compli _compli _compli _compli
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 4 A 4 A 4 A 4 A
Collector-emitter maximum voltage 250 V 250 V 250 V 250 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 10 10 10 10
JEDEC-95 code TO-204AA TO-204AA TO-204AA TO-204AA
JESD-30 code O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2
JESD-609 code e3 e0 e3 e0
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C
Package body material METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED 240 NOT SPECIFIED 240
Polarity/channel type PNP NPN NPN PNP
Maximum power dissipation(Abs) 150 W 150 W 150 W 150 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal surface Tin (Sn) Tin/Lead (Sn/Pb) Tin (Sn) Tin/Lead (Sn80Pb20)
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED 30 NOT SPECIFIED 30
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 20 MHz 20 MHz 20 MHz 20 MHz

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