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2SB1232

Description
Power Bipolar Transistor, 40A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size114KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

2SB1232 Overview

Power Bipolar Transistor, 40A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN

2SB1232 Parametric

Parameter NameAttribute value
Objectid1417099480
Parts packaging codeTO-218
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)40 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-218
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power consumption environment150 W
Maximum power dissipation(Abs)150 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
VCEsat-Max0.8 V

2SB1232 Related Products

2SB1232 2SD1842
Description Power Bipolar Transistor, 40A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN 100V/40A Switching Applications    
Parts packaging code TO-218 TO-218
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 2 2
Reach Compliance Code unknown unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 40 A 40 A
Collector-emitter maximum voltage 100 V 100 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 20 20
JEDEC-95 code TO-218 TO-218
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP NPN
Maximum power consumption environment 150 W 150 W
Maximum power dissipation(Abs) 150 W 150 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
VCEsat-Max 0.8 V 0.8 V
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