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M24C01-RMN1

Description
128X8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SO-8
Categorystorage    storage   
File Size141KB,17 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance  
Download Datasheet Parametric View All

M24C01-RMN1 Overview

128X8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SO-8

M24C01-RMN1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSOIC
package instruction0.150 INCH, PLASTIC, SO-8
Contacts8
Reach Compliance Codecompliant
Is SamacsysN
Maximum clock frequency (fCLK)0.4 MHz
Data retention time - minimum40
Durability1000000 Write/Erase Cycles
I2C control byte1010DDDR
JESD-30 codeR-PDSO-G8
JESD-609 codee4
length4.9 mm
memory density1024 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals8
word count128 words
character code128
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128X8
Output characteristicsOPEN-DRAIN
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)260
power supply2/5 V
Certification statusNot Qualified
Maximum seat height1.75 mm
Serial bus typeI2C
Maximum standby current3e-7 A
Maximum slew rate0.0008 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)1.8 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width3.9 mm
Maximum write cycle time (tWC)10 ms
write protectHARDWARE
Base Number Matches1
M24C16, M24C08
M24C04, M24C02, M24C01
16/8/4/2/1 Kbit Serial I²C Bus EEPROM
s
Two Wire I
2
C Serial Interface
Supports 400 kHz Protocol
Single Supply Voltage:
– 4.5V to 5.5V for M24Cxx
– 2.5V to 5.5V for M24Cxx-W
– 1.8V to 3.6V for M24Cxx-R
s
8
1
PSDIP8 (BN)
0.25 mm frame
s
s
s
s
s
s
s
s
Hardware Write Control
BYTE and PAGE WRITE (up to 16 Bytes)
RANDOM and SEQUENTIAL READ Modes
Self-Timed Programming Cycle
Automatic Address Incrementing
Enhanced ESD/Latch-Up Behaviour
1 Million Erase/Write Cycles (minimum)
40 Year Data Retention (minimum)
8
1
SO8 (MN)
150 mil width
8
1
TSSOP8 (DW)
169 mil width
DESCRIPTION
These electrically erasable programmable memo-
ry (EEPROM) devices are fabricated with STMi-
croelectronics’
High
Endurance,
Single
Polysilicon, CMOS technology. This guarantees
an endurance typically well above one million
Erase/Write cycles, with a data retention of
40 years. The memories are organised as 2048/
1024 x 8 bit (M24C16, M24C08) and 512/256/128
x 8 bit (M24C04, M24C02, M24C01), and operate
with a power supply down to 2.5 V (for the -W ver-
Figure 1. Logic Diagram
VCC
Table 1. Signal Names
E0, E1, E2
SDA
Chip Enable Inputs
Serial Data/Address Input/
Output
Serial Clock
Write Control
Supply Voltage
Ground
3
E0-E2
SCL
WC
M24Cxx
SDA
SCL
WC
V
CC
V
SS
VSS
AI02033
March 1999
1/17

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