2SC1972 datasheet, PDF - EEWORLD Datasheet

2SC1972: DescriptionNPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications); CategoryDiscrete semiconductor The transistor; File Size118KB，3 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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2SC1972 Overview

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

Parameter Name	Attribute value
Parts packaging code	SFM
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	EMITTER
Maximum collector current (IC)	3.5 A
Collector-emitter maximum voltage	17 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
highest frequency band	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	25 W
Maximum power dissipation(Abs)	1.5 W
Minimum power gain (Gp)	7.5 dB
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

	2SC1972	SC1972
Description	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

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