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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BAS29; BAS31; BAS35
General purpose controlled
avalanche (double) diodes
Product data sheet
Supersedes data of 2001 Oct 10
2003 Mar 20
NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
FEATURES
•
Small plastic SMD package
•
Switching speed: max. 50 ns
•
General application
•
Continuous reverse voltage: max. 90 V
•
Repetitive peak reverse voltage: max. 110 V
•
Repetitive peak forward current: max. 600 mA
•
Repetitive peak reverse current: max. 600 mA.
APPLICATIONS
•
General purpose switching in e.g. surface mounted
circuits.
DESCRIPTION
General purpose switching diodes fabricated in planar
technology, and encapsulated in small rectangular plastic
SMD SOT23 packages. The BAS29 consists of a single
diode. The BAS31 has two diodes in series. The BAS35
has two diodes with a common anode.
MARKING
3
handbook, halfpage
2
BAS29; BAS31; BAS35
PINNING
DESCRIPTION
PIN
BAS29
1
2
3
anode
cathode
BAS31
anode
common
connection
BAS35
cathode (k1)
cathode (k2)
common
anode
not connected cathode
1
2
3
3
a. Simplified outline.
c. BAS31 diode.
1
2
n.c.
1
2
3
d. BAS35 diode.
1
TYPE NUMBER
BAS29
BAS31
BAS35
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
∗
= W : Made in China.
MARKING
CODE
(1)
b. BAS29 diode.
L20 or
∗A8
L21 or
∗V1
L22 or
∗V2
MAM233
Fig.1 Simplified outline (SOT23) and symbols.
2003 Mar 20
2
NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
RRM
V
R
I
F
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
PARAMETER
CONDITIONS
BAS29; BAS31; BAS35
MIN.
−
−
MAX.
UNIT
110
90
250
150
600
V
V
mA
mA
mA
single diode loaded; see Fig.2;
note 1
double diode loaded; see Fig.2;
note 1
−
−
−
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 100
µs
t=1s
−
−
−
−
−
−
−65
−
10
4
0.75
250
600
5
+150
150
A
A
A
mW
mA
mJ
°C
°C
P
tot
I
RRM
E
RRM
T
stg
T
j
Note
total power dissipation
repetitive peak reverse current
repetitive peak reverse energy
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
t
p
≥
50
µs;
f
≤
20 Hz; T
j
= 25
°C
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20
3
NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.3
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 200 mA
I
F
= 400 mA
I
R
reverse current
see Fig.5
V
R
= 90 V
V
R
= 90 V; T
j
= 150
°C
V
(BR)R
C
d
t
rr
reverse avalanche breakdown
voltage
diode capacitance
reverse recovery time
I
R
= 1 mA
f = 1 MHz; V
R
= 0; see Fig.6
PARAMETER
CONDITIONS
BAS29; BAS31; BAS35
MIN.
MAX.
UNIT
−
−
−
−
−
−
−
120
−
−
750
840
900
1
1.25
100
100
170
35
50
mV
mV
mV
V
V
nA
µA
V
pF
ns
when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100
Ω;
measured
at I
R
= 3 mA; see Fig.7
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
360
500
UNIT
K/W
K/W
2003 Mar 20
4
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