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FDMC8878-NBSE003

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size410KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
Download Datasheet Parametric View All

FDMC8878-NBSE003 Overview

Transistor

FDMC8878-NBSE003 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codecompliant
Is SamacsysN
JESD-609 codee4
Humidity sensitivity level1
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Base Number Matches1
FDMC8878 N-Channel Power Trench
®
MOSFET
February
2007
FDMC8878
N-Channel Power Trench
®
MOSFET
30V, 16.5A, 14mΩ
Features
General Description
Max r
DS(on)
= 14mΩ at V
GS
= 10V, I
D
= 9.6A
Max r
DS(on)
= 17mΩ at V
GS
= 4.5V, I
D
= 8.7A
Low Profile - 1mm max in Power 33
RoHS Compliant
tm
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s
advanced
Power
Trench
process. It has been optimized for power management
applications.
Application
DC - DC Conversion
Bottom
Top
5
6
7
8
D
1
D
D
D
D
D
D
S
S
S
G
5
6
7
8
4
G
3
S
2
S
1
S
4
3
2
D
Power 33
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
I
D
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
P
D
T
J
, T
STG
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
T
C
= 25°C
T
A
= 25°C
(Note 1a)
T
C
= 25°C
T
C
= 25°C
T
A
= 25°C
(Note 1a)
Parameter
Ratings
30
±20
16.5
38
9.6
60
31
2.1
-55 to +150
W
°C
A
Units
V
V
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
4
60
°C/W
Package Marking and Ordering Information
Device Marking
FDMC8878
Device
FDMC8878
Package
Power 33
Reel Size
7”
Tape Width
8mm
Quantity
3000
units
©2007 Fairchild Semiconductor Corporation
FDMC8878 Rev.D
1
www.fairchildsemi.com
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