MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
BCR20A, BCR20B, BCR20C, BCR20E
OUTLINE DRAWING
Dimensions
in mm
φ2.0
MIN
3
1
φ11
MAX
1
T
1
TERMINAL
2
T
2
TERMINAL
3
GATE TERMINAL
2
• I
T (RMS)
...................................................................... 20A
• V
DRM
..............................................................400V/500V
• I
FGT
!
, I
RGT
!
, I
RGT
#
........................................... 30mA
BCR20A
APPLICATION
Contactless AC switches, light dimmer,
on/off control of traffic signals, on/off control of copier lamps, microwave ovens,
solid state relay
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V1
Non-repetitive peak off-state
voltage
V1
Voltage class
8
400
600
12
500
700
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Conditions
Commercial frequency, sine full
wave, 360° conduction
BCR20A, B, C
BCR20E
T
c
=98°C
T
b
=64°C
Ratings
20
220
203
5.0
0.5
10
2.0
–20 ~ +125
–20 ~ +125
9 MAX
Unit
A
A
A
2
s
W
W
V
A
°C
°C
φ8.7
MAX
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
V1.
Gate open.
3 MAX
2
17.5 MAX
Feb.1999
24 MAX
3
1
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
MAXIMUM RATINGS (continue)
Symbol
Parameter
BCR20A
—
Weight (Typical value)
BCR20B
BCR20C
BCR20E
—
—
V
iso
Soldering temperature
Mounting torque
Isolated voltage
BCR20A only, 10 sec.
BCR20C only
BCR20E only, T
a
=25°C, AC 1 minute, T
2
terminal to base
Conditions
Ratings
3.5
9.0
9.0
11
230
30
2.94
1500
°C
kg·cm
N·m
V
g
Unit
ELECTRICAL CHARACTERISTICS
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
R
th (j-b)
(dv/dt)
c
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Gate trigger
current
V2
Gate trigger voltage
V2
Parameter
Repetitive peak off-state current
On-state voltage
!
@
#
!
@
#
T
j
=125°C, V
D
=1/2V
DRM
Test conditions
T
j
=125°C, V
DRM
applied
T
c
=25°C, T
b
=25°C (BCR20E only), I
TM
=30A, Instantaneous
measurement
Limits
Min.
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
Max.
3.0
1.5
1.5
1.5
1.5
30
30
30
—
1.1
2.4
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
°C/W
V/µs
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
—
—
—
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
—
—
0.2
—
—
V3
Junction to case (BCR20A, BCR20B, BCR20C)
Junction to base (BCR20E)
V2.
Measurement using the gate trigger characteristics measurement circuit.
V3.
The critical-rate of rise of the off-state commutating voltage is shown in the table below.
Voltage
class
V
DRM
(V)
(dv/dt)
c
Symbol
R
Min.
—
1. Junction temperature
T
j
=125°C
L
10
V/µs
R
—
2. Rate of decay of on-state commutat-
ing current
(di/dt)
c
=–10A/ms
3. Peak off-state voltage
V
D
=400V
L
10
Unit
Test conditions
Commutating voltage and current waveforms
(inductive load)
8
400
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
TIME
V
D
10
600
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
BCR20B
2-φ3.2 MIN
Dimensions
in mm
BCR20C
2-φ3.2 MIN
BCR20E
5.3 MAX
20 MAX
(φ16)
23±0.2
φ33
MAX
2
φ2.5
MIN
φ2.0
MIN
1
20 MAX
1
3
23±0.2
33 MAX
(16.2)
1
1
φ2.0
MIN
2
1
T
1
TERMINAL
2
T
2
TERMINAL
3
GATE
3
TERMINAL
φ2.0
MIN
10 MAX 19.5 MAX
1.9 MIN
1.8 MAX
10.5 MAX
25.5 MAX
11 MAX
3 MIN
3
26 MAX
φ8.7
MAX
22 MAX
21 MAX
2
M6
×
1. 0
φ8.7
MAX
2
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
RATED SURGE ON-STATE CURRENT
320
10
3
7 T
C
= 25°C
5 T
b
= 25°C
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
ON-STATE VOLTAGE (V)
SURGE ON-STATE CURRENT (A)
280
240
200
160
120
80
40
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE VOLTAGE (V)
10
1
7
5
3 V
GT
= 1.5V
2
10
0
7
5
3
2
P
GM
= 5.0W
I
GM
= 2A
GATE TRIGGER • CURRENT VOLTAGE (T
j
= t°C)
GATE TRIGGER • CURRENT VOLTAGE (T
j
= 25°C)
3
2 V
GM
= 10V
P
G(AV)
= 0.5W
100 (%)
GATE CHARACTERISTICS
GATE TRIGGER CURRENT·VOLTAGE VS.
JUNCTION TEMPERATURE
200
TEST PROCEDURE
Ι, ΙΙ
AND
ΙΙΙ
180
160
140
120
100
80
60 GATE TRIGGER
VOLTAGE
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
Feb.1999
GATE TRIGGER CURRENT
I
FGT I,
I
RGT I,
I
RGT III
V
GD
= 0.2V
10
–1
7
5
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
GATE CURRENT (mA)
1.8 MAX
12 MAX
φ8.7
MAX
3
22.5 MAX
19 MAX
21 MAX
14
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE) (BCR20A, B, C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO BASE) (BCR20E)
TRANSIENT THERMAL IMPEDANCE (°C/W)
TRANSIENT THERMAL IMPEDANCE (°C/W)
10
2
2 3 5 7 10
3
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
10
2
2 3 5 7 10
3
2 3 5 7 10
4
2 3 5 7 10
5
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
BCR20A, BCR20B,
BCR20C
BCR20E
ON-STATE POWER DISSIPATION (W)
50
45
40 360°
35 CONDUCTION
RESISTIVE,
30 INDUCTIVE
25 LOADS
20
15
10
5
0
0
4
8
12
16
20
24
28
32
BASE TEMPERATURE (°C)
CASE TEMPERATURE (°C)
140
120
100
80
60
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
40 CURVES APPLY
REGARDLESS
20 OF CONDUCTION
ANGLE
0
0
4
8 12 16
20
24
28
32
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR20A)
160
160 160 t4.0
120 120 t3.0
140
80 80 t2.0
120
100
80
60
40
20
0
0
4
8
12
16
ALL FINS ARE
BLACK PAINTED
ALUMINUM AND GREASED
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
NATURAL CONVECTION
: MOUNTING ON FIN
WITH SOLDER
: MOUNTING PLATE
WITHOUT GREASE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR20B)
160
140
120
100
80
60
40
20
0
0
4
8
12
16
NATURAL
CONVECTION
: MOUNTING ON FIN
WITHOUT GREASE
: INSULATED PLATE
WITH GREASE
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
160 160 t4.0
120 120 t3.0
80 80 t2.0
20
24
28
32
20
24
28
32
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR20C)
160
ALL FINS ARE BLACK PAINTED
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR20E)
160
ALL FINS ARE BLACK PAINTED
AMBIENT TEMPERATURE (°C)
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
ALUMINUM AND GREASED
140
RESISTIVE, INDUCTIVE LOADS
NATURAL CONVECTION
ALUMINUM AND GREASED
120
100
80
60
40
20
0
0
4
8
12
160 160 t4.0
120 120 t3.0
80 80 t2.0
120
100
80
60
40
20
0
0
4
8
12
160 160 t4.0
120 120 t3.0
80 80 t2.0
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
NATURAL
CONVECTION
: MOUNTING ON FIN
WITHOUT GREASE
: MICA PLATE
WITH GREASE
16
20
24
28
32
16
20
24
28
32
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
6V
V
A
R
G
6V
V
A
R
G
TEST PROCEDURE
1
6Ω
TEST PROCEDURE
2
6V
V
A
R
G
TEST PROCEDURE
3
Feb.1999
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