Transistor
2SC4502
Silicon NPN epitaxial planer type
For mtermediate frequency amplification
Unit: mm
6.9±0.1
0.15
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.5
4.5±0.1
s
q
q
q
0.7
4.0
Features
High transition frequency f
T
.
Large collector power dissipation P
C
.
Allowing supply with the radial taping.
0.2
0.65 max.
1.0 1.0
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
(Ta=25˚C)
Ratings
50
45
4
50
1
150
–55 ~ +150
Unit
0.45
–0.05
0.45
–0.05
+0.1
+0.1
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C*
T
j
T
stg
2.5±0.5
1
2
2.5±0.5
3
V
V
mA
W
˚C
˚C
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
1.2±0.1
0.65
max.
0.45
+0.1
– 0.05
2.5±0.1
V
(HW type)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Common emitter reverse transfer capacitance
Power gain
(Ta=25˚C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
re
PG
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 100µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100µA, I
C
= 0
V
CE
= 10V, I
C
= 10µA
I
C
= 20mA, I
B
= 2mA
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= –1mA, f = 10.7MHz
V
CB
= 10V, I
E
= –10mA, f = 58MHz
22
300
1.5
30
50
45
4
20
100
0.4
V
MHz
pF
dB
min
typ
max
100
Unit
nA
V
V
V
14.5±0.5
1
Transistor
P
C
— Ta
1.2
80
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
70
2SC4502
I
C
— V
CE
60
25˚C
I
B
=2.0mA
1.8mA
1.6mA
50
40
30
20
10
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
0
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
50
Ta=100˚C
40
–25˚C
V
CE
=10V
I
C
— V
BE
Collector power dissipation P
C
(W)
1.0
Collector current I
C
(mA)
60
0.8
0.6
Collector current I
C
(mA)
30
0.4
20
0.2
10
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
100
30
10
3
1
0.3
0.1
25˚C
0.03
0.01
0.1
Ta=100˚C
–25˚C
I
C
/I
B
=10
100
h
FE
— I
C
600
V
CE
=10V
V
CB
=10V
Ta=25˚C
f
T
— I
E
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
30
100
80
500
400
60
300
40
Ta=100˚C
25˚C
–25˚C
200
20
100
0.3
1
3
10
30
100
0
0.1
0.3
1
3
10
0
– 0.1 – 0.3
–1
–3
–10
–30
–100
Collector current I
C
(mA)
Collector current I
C
(mA)
Emitter current I
E
(mA)
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
I
E
=0
f=1MHz
Ta=25˚C
C
re
— V
CE
Common emitter reverse transfer capacitance C
re
(pF)
–2.4
I
C
=1mA
f=10.7MHz
Ta=25˚C
30
PG — I
E
V
CB
=10V
f=58MHz
Ta=25˚C
3.0
2.5
–2.0
25
2.0
–1.6
Power gain PG (dB)
1
3
10
30
100
20
1.5
–1.2
15
1.0
– 0.8
10
0.5
– 0.4
5
0
1
3
10
30
100
0
0
– 0.1 – 0.3
–1
–3
–10
–30
–100
Collector to base voltage V
CB
(V)
Collector to emitter voltage V
CE
(V)
Emitter current I
E
(mA)
2
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