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2SC4995

Description
Silicon NPN Epitaxial
CategoryDiscrete semiconductor    The transistor   
File Size61KB,10 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SC4995 Overview

Silicon NPN Epitaxial

2SC4995 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionCOLLECTOR
Maximum collector current (IC)0.05 A
Collector-based maximum capacity1.05 pF
Collector-emitter maximum voltage8 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.1 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)11000 MHz
Base Number Matches1
2SC4995
Silicon NPN Epitaxial
ADE-208-013
1st. Edition
Application
VHF / UHF wide band amplifier
Features
High gain bandwidth product
f
T
= 11 GHz Typ
High gain, low noise figure
PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
CMPAK–4
2
3
4
1
1. Collector
2. Emitter
3. Base
4. Emitter
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