BCW32T116 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> BCW32T116

BCW32T116: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon; CategoryDiscrete semiconductor The transistor; File Size72KB，9 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/

Download Datasheet Parametric Compare View All

BCW32T116 Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	BCW32T116	-	-	View	Buy Now

BCW32T116 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon

BCW32T116 Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	4 pF
Collector-emitter maximum voltage	32 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
VCEsat-Max	0.3 V
Base Number Matches	1

Preview

Download Datasheet

View All

Abbreviated markings on mini-mold transistors

Transistors

Abbreviated markings on mini-mold

transistors

EMT3 and UMT3 labels

On general transistors, the product and h

rank are

indicated by 2 or 3 letters. On digital transistors, the

product type is indicated by a 2-digit number.

Codes B and AF indicate products.

MPT3 labels

The label on the MPT3 packages indicates the product,

rank, and month of manufacture using 4 letters.

T indicates the month of manufacture.

R indicates the h

rank.

AFQ

Codes R and Q indicate h

ranks.

DA indicates the product.

MPT3 labels

General transistors

Code 14 indicates the product

The month of manufacture is indicated as shown below

by a letter, excluding I and O. (This method is also used

on other packages.)

Month of

manufacture

9 10 11 12

Even year A

Odd year N

C D

G H

Digital transistor

P Q R

V W X

SMT3 labels

On the SMT3 package, the product and h

rank are

indicated by 2 or 3 letters on general transistors, and the

product is indicated by a 2-digit number on digital

transistors.

Furthermore, on SMT products with direct laser labels

there is also a number indicating the week of

manufacture. The direction of the number indicates

whether the year of manufacture was an odd year or an

even year.

UMT5, UMT6, SMT5, and SMT6 labels

The labels on UMT5, UMT6, SMT5, and SMT6

packages show the product name excluding the initial

two letters (UM or FM), and consist of 2 or 3 letters. On

the SMT6 packages, the week of manufacture is also

shown (similar to the SMT3). The marking is made using

direct laser labeling.

(a) Manufactured during the

35th week of an odd year.

(b) Manufactured during the

35th week of an even year.

SMT3 labels

BCW32T116 Related Products

	BCW32T116	BCW31T116	BCW33T116	BCW60CT116	BCW60DT116	BCX71JT116	BCW72T116
Description	Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.2 A	0.2 A	0.2 A	0.1 A
Collector-based maximum capacity	4 pF	4 pF	4 pF	4.5 pF	4.5 pF	6 pF	4 pF
Collector-emitter maximum voltage	32 V	32 V	32 V	32 V	32 V	45 V	45 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	200	110	420	260	380	250	200
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	PNP	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	300 MHz	300 MHz	300 MHz	125 MHz	125 MHz	180 MHz	300 MHz
VCEsat-Max	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	-
Is Samacsys	N	N	N	N	N	-	-
Base Number Matches	1	1	1	1	1	-	-
Other features	-	-	-	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE

Recommended Resources

Infrared voice control circuit

Transistor withstand voltage measuring instrument circuit c

One of the improvements of DW10M-200, 400, 600 type demagnetization switch control circuit

Zero crossing trigger temperature control circuit

Building block reference voltage source circuit diagram 2

Low frequency oscillator using TCA580

The process of playing with STM32 for free (a paradise for the poor)!: Since I couldn't set up H-JTAG with source code debugging, I don't have its JTAG emulator.But the board can be downloaded and run normally with H-JTAG version 0.91, and I already have the previous wig...; zhrui_2000 stm32/stm8

Android phones can also install Ubuntu operating system-dual boot: Source: Embedded Linux Chinese Website Author: Alex Time: 2013-12-31 Tag: [url=http://www.embeddedlinux.org.cn/tag.php?/Ubuntu/]Ubuntu[/url] Clicks: 19 [align=left]Ubuntu announced a new developer fea...; qinkaiabc Talking

Post an egg: ...; minghao34 Embedded System

Xiaobai asks for help on the RS485 serial communication problem of msp430: #include// System clock initialization, external 8M crystal oscillator void Clock_Init() { uchar i; BCSCTL1=~XT2OFF; // Turn on XT2 oscillator BCSCTL2|=SELM1+SELS; //MCLK is 8MHZ, SMCLK is 8MHZ do{ IF...; moximei Microcontroller MCU

Font Design and Application (IV) Design of Digital Clock: Article excerpt: "ARM Cortex-M0 starts here" Author: zhaojun_xfhttps://bbs.eeworld.com.cn/thread-324656-1-1.htmlFont design and applicationIn general, there is no font library in TFT color screens or ...; EEWORLD社区 NXP MCU

TI ARM DAY Information: Please download the various materials of 2013 TI ARM DAY seminar if you need them:):lol...; newofcortexm3 Microcontroller MCU

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components