BCW60DT116 datasheet, PDF - EEWORLD Datasheet

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BCW60DT116: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon; CategoryDiscrete semiconductor The transistor; File Size72KB，9 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/

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BCW60DT116 Overview

Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon

BCW60DT116 Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Other features	LOW NOISE
Maximum collector current (IC)	0.2 A
Collector-based maximum capacity	4.5 pF
Collector-emitter maximum voltage	32 V
Configuration	SINGLE
Minimum DC current gain (hFE)	380
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	125 MHz
VCEsat-Max	0.3 V
Base Number Matches	1

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Abbreviated markings on mini-mold transistors

Transistors

Abbreviated markings on mini-mold

transistors

EMT3 and UMT3 labels

On general transistors, the product and h

rank are

indicated by 2 or 3 letters. On digital transistors, the

product type is indicated by a 2-digit number.

Codes B and AF indicate products.

MPT3 labels

The label on the MPT3 packages indicates the product,

rank, and month of manufacture using 4 letters.

T indicates the month of manufacture.

R indicates the h

rank.

AFQ

Codes R and Q indicate h

ranks.

DA indicates the product.

MPT3 labels

General transistors

Code 14 indicates the product

The month of manufacture is indicated as shown below

by a letter, excluding I and O. (This method is also used

on other packages.)

Month of

manufacture

9 10 11 12

Even year A

Odd year N

C D

G H

Digital transistor

P Q R

V W X

SMT3 labels

On the SMT3 package, the product and h

rank are

indicated by 2 or 3 letters on general transistors, and the

product is indicated by a 2-digit number on digital

transistors.

Furthermore, on SMT products with direct laser labels

there is also a number indicating the week of

manufacture. The direction of the number indicates

whether the year of manufacture was an odd year or an

even year.

UMT5, UMT6, SMT5, and SMT6 labels

The labels on UMT5, UMT6, SMT5, and SMT6

packages show the product name excluding the initial

two letters (UM or FM), and consist of 2 or 3 letters. On

the SMT6 packages, the week of manufacture is also

shown (similar to the SMT3). The marking is made using

direct laser labeling.

(a) Manufactured during the

35th week of an odd year.

(b) Manufactured during the

35th week of an even year.

SMT3 labels

BCW60DT116 Related Products

	BCW60DT116	BCW31T116	BCW32T116	BCW33T116	BCW60CT116	BCX71JT116	BCW72T116
Description	Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.2 A	0.1 A	0.1 A	0.1 A	0.2 A	0.2 A	0.1 A
Collector-based maximum capacity	4.5 pF	4 pF	4 pF	4 pF	4.5 pF	6 pF	4 pF
Collector-emitter maximum voltage	32 V	32 V	32 V	32 V	32 V	45 V	45 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	380	110	200	420	260	250	200
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	PNP	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	125 MHz	300 MHz	300 MHz	300 MHz	125 MHz	180 MHz	300 MHz
VCEsat-Max	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	-
Is Samacsys	N	N	N	N	N	-	-
Other features	LOW NOISE	-	-	-	LOW NOISE	LOW NOISE	LOW NOISE
Base Number Matches	1	1	1	1	1	-	-

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