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BCW60CT116

Description
Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size72KB,9 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet Parametric Compare View All

BCW60CT116 Overview

Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon

BCW60CT116 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresLOW NOISE
Maximum collector current (IC)0.2 A
Collector-based maximum capacity4.5 pF
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)260
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)125 MHz
VCEsat-Max0.3 V
Base Number Matches1
Abbreviated markings on mini-mold transistors
Transistors
Abbreviated markings on mini-mold
transistors
!
EMT3 and UMT3 labels
On general transistors, the product and h
FE
rank are
indicated by 2 or 3 letters. On digital transistors, the
product type is indicated by a 2-digit number.
Codes B and AF indicate products.
!
MPT3 labels
The label on the MPT3 packages indicates the product,
h
FE
rank, and month of manufacture using 4 letters.
DA
RT
2
B
3
T indicates the month of manufacture.
R indicates the h
FE
rank.
BR
AFQ
Codes R and Q indicate h
FE
ranks.
DA indicates the product.
MPT3 labels
General transistors
14
Code 14 indicates the product
The month of manufacture is indicated as shown below
by a letter, excluding I and O. (This method is also used
on other packages.)
Month of
manufacture
1
4
5
E
S
6
F
T
7
U
8
9 10 11 12
J
K
L
Y
M
Z
Even year A
Odd year N
C D
G H
Digital transistor
P Q R
V W X
!
SMT3 labels
On the SMT3 package, the product and h
FE
rank are
indicated by 2 or 3 letters on general transistors, and the
product is indicated by a 2-digit number on digital
transistors.
Furthermore, on SMT products with direct laser labels
there is also a number indicating the week of
manufacture. The direction of the number indicates
whether the year of manufacture was an odd year or an
even year.
!
UMT5, UMT6, SMT5, and SMT6 labels
The labels on UMT5, UMT6, SMT5, and SMT6
packages show the product name excluding the initial
two letters (UM or FM), and consist of 2 or 3 letters. On
the SMT6 packages, the week of manufacture is also
shown (similar to the SMT3). The marking is made using
direct laser labeling.
26
26
35
35
(a) Manufactured during the
35th week of an odd year.
(b) Manufactured during the
35th week of an even year.
SMT3 labels

BCW60CT116 Related Products

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Description Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.1 A 0.1 A 0.1 A 0.2 A 0.2 A 0.1 A
Collector-based maximum capacity 4.5 pF 4 pF 4 pF 4 pF 4.5 pF 6 pF 4 pF
Collector-emitter maximum voltage 32 V 32 V 32 V 32 V 32 V 45 V 45 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 260 110 200 420 380 250 200
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN PNP NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 125 MHz 300 MHz 300 MHz 300 MHz 125 MHz 180 MHz 300 MHz
VCEsat-Max 0.3 V 0.3 V 0.3 V 0.3 V 0.3 V 0.3 V 0.3 V
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 -
Is Samacsys N N N N N - -
Other features LOW NOISE - - - LOW NOISE LOW NOISE LOW NOISE
Base Number Matches 1 1 1 1 1 - -
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