2SC5178-T1 datasheet, PDF - EEWORLD Datasheet

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2SC5178-T1: DescriptionNPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION; File Size43KB，12 Pages; ManufacturerNEC ( Renesas ); Websitehttps://www2.renesas.cn/zh-cn/

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2SC5178-T1 Overview

NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

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DATA SHEET

SILICON TRANSISTOR

2SC5178

NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE

FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES

• Low current consumption and high gain

21e

= 11.5 dB TYP. @ V

= 2 V, I

= 7 mA, f = 2 GHz

21e

= 10.5 dB TYP. @ V

= 1 V, I

= 5 mA, f = 2 GHz

0.4

–0.05

+0.1

PACKAGE DIMENSIONS

(Units: mm)

0.4

–0.05

0.16

+0.1

–0.06

EIAJ: SC-61

2.9±0.2

(1.8)

0.850.95

PART

NUMBER

2SC5178-T1

0.6

–0.05

5°

0 to 0.1

5°

QUANTITY

3000 units/reel

ARRANGEMENT

+0.1

Embossed tape, 8 mm wide, pins

No. 3 (base) and No. 4 (emitter) facing

the perforations

0.8

5°

1.1

–0.1

+0.2

2SC5178-T2

3000 units/reel

Embossed tape, 8 mm wide, pins

No. 1 (collector) and No. 2 (emitter)

facing the perforations

5°

* Contact your NEC sales representatives to order samples for

evaluation (available in batches of 50).

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

4. Emitter

ABSOLUTE MAXIMUM RATINGS (T

= 25

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

CBO

CEO

EBO

stg

150

–65 to +150

°C

CAUTION;

This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.

Document No. P12102EJ2V0DS00 (2nd edition)

(Previous No. TC-2475)

Date Published November 1996 N

Printed in Japan

0.4

–0.05

+0.1

(1.9)

ORDERING INFORMATION

+0.1

• 4-pin Mini-Mold package

2.8

–0.3

+0.2

1.5

–0.1

+0.2

T84

1994

2SC5178-T1 Related Products

	2SC5178-T1	2SC5178	2SC5178-T2
Description	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

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