DATA SHEET
SILICON TRANSISTOR
2SC5178
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low current consumption and high gain
|S
21e
|
2
= 11.5 dB TYP. @ V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
|S
21e
|
2
= 10.5 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
0.4
–0.05
+0.1
PACKAGE DIMENSIONS
(Units: mm)
0.4
–0.05
0.16
+0.1
–0.06
EIAJ: SC-61
2.9±0.2
(1.8)
0.850.95
2
PART
NUMBER
2SC5178-T1
0.6
–0.05
1
4
5°
0 to 0.1
5°
QUANTITY
3000 units/reel
ARRANGEMENT
+0.1
Embossed tape, 8 mm wide, pins
No. 3 (base) and No. 4 (emitter) facing
the perforations
0.8
5°
1.1
–0.1
+0.2
2SC5178-T2
3000 units/reel
Embossed tape, 8 mm wide, pins
No. 1 (collector) and No. 2 (emitter)
facing the perforations
5°
* Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
5
3
2
10
30
150
–65 to +150
V
V
V
mA
mW
°C
°C
CAUTION;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12102EJ2V0DS00 (2nd edition)
(Previous No. TC-2475)
Date Published November 1996 N
Printed in Japan
©
0.4
–0.05
+0.1
(1.9)
ORDERING INFORMATION
3
+0.1
• 4-pin Mini-Mold package
2.8
–0.3
+0.2
1.5
–0.1
+0.2
T84
1994
2SC5178
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Feedback Capacitance
SYMBOL
I
CBO
I
EBO
h
FE
|S
21e
|
2
|S
21e
|
2
NF
NF
f
T
f
T
C
re
10.5
8.5
70
9.5
7.5
11.5
10.5
1.5
1.5
13.5
12
0.3
0.5
2.0
2.0
MIN.
TYP.
MAX.
100
100
140
dB
dB
dB
dB
GHz
GHz
pF
UNIT
nA
nA
CONDITIONS
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 2 V, I
C
= 7 mA
*1
V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
*2
*1.
*2.
Measured with pulses: Pulse width
≤
350
µ
s, duty cycle
≤
2 %, pulsed
Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal
of the bridge.
h
FE
Class
Class
Marking
h
FE
FB
T84
70 to 140
2
2SC5178
CHARACTERISTICS CURVES (T
A
= 25
°
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
50
P
T
– Total Power Dissipation – mW
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
I
C
– Collector Current – mA
200
40
30
100
20
30 mW
10
0
50
100
150
0
0.5
V
BE
– Base to Emitter Voltage – V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1.0
T
A
– Ambient Temperature – °C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
I
C
– Collector Current – mA
500
h
FE
– DC Current Gain
20
200
µ
A
180
µ
A
160
µ
A
140
µ
A
120
µ
A
100
µ
A
80
µ
A
60
µ
A
40
µ
A
I
B
= 20
µ
A
0
1.0
2.0
3.0
200
V
CE
= 2 V
100
50
V
CE
= 1 V
15
10
5
20
10
1
2
5
10
20
50
100
V
CE
– Collector to Emitter Voltage – V
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
18
f
T
– Gain Bandwidth Product – GHz
|S
21e
|
2
– Insertion Power Gain – dB
I
C
– Collector Current – mA
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
14
f = 2 GHz
2V
f = 2 GHz
16
14
12
10
8
6
4
1
2
5
10
V
CE
= 1 V
2V
12
10
V
CE
= 1 V
8
6
4
1
2
5
10
I
C
– Collector Current – mA
I
C
– Collector Current – mA
3
2SC5178
NOISE FIGURE vs.
COLLECTOR CURRENT
4
C
re
– Feed-back Capacitance – pF
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
0.5
f = 2 GHz
0.4
f = 2 GHz
NF – Noise Figure – dB
3
V
CE
= 1 V
V
CE
= 2 V
0.3
2
0.2
1
0.1
0
1
2
5
10
20
100
0
1.0
2.0
3.0
4.0
5.0
I
C
– Collector Current – mA
V
CB
– Collector to Base Voltage – V
4
2SC5178
S-PARAMETER
V
CE
= 1 V, I
C
= 1 mA, Z
O
= 50
Ω
FREQUENCY
(MHz)
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
MAG
0.954
0.933
0.902
0.855
0.798
0.739
0.667
0.597
0.519
0.472
0.413
0.365
0.306
0.280
0.259
S
11
ANG
–9.5
–19.1
–28.3
–38.2
–48.3
–59.2
–69.1
–77.4
–87.9
–97.7
–110.8
–123.4
–135.0
–154.3
–174.4
MAG
3.362
3.305
3.251
3.204
3.113
3.032
2.892
2.719
2.626
2.484
2.345
2.255
2.169
2.015
1.982
S
21
ANG
168.9
158.2
148.3
137.6
126.9
116.5
107.3
96.6
88.5
80.5
72.8
64.6
58.1
51.3
44.3
MAG
0.026
0.061
0.084
0.106
0.150
0.170
0.178
0.195
0.213
0.223
0.233
0.238
0.249
0.254
0.239
S
12
ANG
77.0
76.5
68.1
63.3
54.1
53.5
45.2
37.7
31.8
31.7
24.9
18.9
14.2
14.6
10.0
MAG
0.989
0.972
0.941
0.917
0.890
0.842
0.769
0.729
0.675
0.634
0.582
0.530
0.496
0.452
0.461
S
22
ANG
–6.9
–13.5
–20.5
–27.6
–34.5
–40.8
–47.5
–52.4
–60.3
–64.6
–70.9
–77.0
–83.0
–88.0
–99.2
V
CE
= 1 V, I
C
= 3 mA, Z
O
= 50
Ω
FREQUENCY
(MHz)
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
MAG
0.878
0.789
0.694
0.589
0.501
0.423
0.340
0.280
0.221
0.196
0.157
0.160
0.135
0.181
0.204
S
11
ANG
–16.5
–31.1
–45.0
–56.7
–69.1
–80.2
–90.7
–100.1
–114.0
–125.8
–142.7
–168.6
162.2
148.5
127.6
MAG
8.193
7.559
6.833
6.147
5.496
4.936
4.427
3.975
3.672
3.347
3.066
2.893
2.715
2.530
2.438
S
21
ANG
161.7
145.1
130.9
118.1
106.8
96.9
88.7
80.0
73.1
66.4
60.4
53.8
48.4
42.5
36.8
MAG
0.030
0.054
0.075
0.095
0.115
0.120
0.140
0.141
0.163
0.181
0.176
0.199
0.202
0.214
0.218
S
12
ANG
68.5
72.2
64.4
53.7
53.5
52.5
47.1
41.7
40.1
34.6
33.4
30.6
28.2
29.8
24.2
MAG
0.968
0.899
0.816
0.727
0.673
0.600
0.537
0.496
0.437
0.419
0.374
0.333
0.304
0.284
0.287
S
22
ANG
–11.6
–22.2
–30.8
–38.1
–45.4
–49.8
–54.3
–60.1
–66.0
–69.6
–75.8
–76.7
–85.6
–92.0
–99.7
5
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