NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low current consumption and high gain
|S
21e
|
2
= 11.5 dB TYP. @ V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
|S
21e
|
2
= 10.5 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
0.4
–0.05
+0.1
PACKAGE DIMENSIONS
(Units: mm)
0.4
–0.05
0.16
+0.1
–0.06
EIAJ: SC-61
2.9±0.2
(1.8)
0.850.95
2
PART
NUMBER
2SC5178-T1
0.6
–0.05
1
4
5°
0 to 0.1
5°
QUANTITY
3000 units/reel
ARRANGEMENT
+0.1
Embossed tape, 8 mm wide, pins
No. 3 (base) and No. 4 (emitter) facing
the perforations
0.8
5°
1.1
–0.1
+0.2
2SC5178-T2
3000 units/reel
Embossed tape, 8 mm wide, pins
No. 1 (collector) and No. 2 (emitter)
facing the perforations
5°
* Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
5
3
2
10
30
150
–65 to +150
V
V
V
mA
mW
°C
°C
CAUTION;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
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