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2SC5183-T1

Description
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
File Size41KB,12 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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2SC5183-T1 Overview

NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

DATA SHEET
SILICON TRANSISTOR
2SC5183
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD
PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low Noise
• NF = 1.3 dB
• NF = 1.3 dB
TYP.
TYP.
PACKAGE DIMENSIONS
@ V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
@ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
(Units: mm)
0.4
+0.1
–0.05
0.4
+0.1
–0.05
3
4
2.8
+0.2
–0.3
1.5
+0.2
–0.1
• 4-pin Mini-Mold package
EIAJ: SC-61
2.9 ± 0.2
(1.8)
0.85 0.95
2
T86
ORDERING INFORMATION
PART
NUMBER
2SC5183-T1
1
QUANTITY
ARRANGEMENT
Embossed tape, 8 mm wide,
Pin No. 3 (base) and No. 4 (emitter)
0.6
+0.1
–0.05
1.1
+0.2
–0.1
3 000 units/reel
2SC5183-T2
Embossed tape, 8 mm wide,
Pins No. 1 (collector) and No. 2
(emitter) facing the perforations
0.8
facing the perforations
PIN CONNECTIONS
*
Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
1.
2.
3.
4.
Collector
Emitter
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
5
3
2
30
90
150
–65 to +150
V
V
V
mA
mW
˚
C
˚
C
Caution;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12107EJ2V0DS00 (2nd edition)
(Previous No. TC-2480)
Date Published November 1996 N
Printed in Japan
0~0.1
©
0.16
+0.1
–0.06
0.4
+0.1
–0.05
(1.9)
1994

2SC5183-T1 Related Products

2SC5183-T1 2SC5183-T2
Description NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

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