SKKT20B/08D datasheet, PDF - EEWORLD Datasheet

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SKKT20B/08D: Description28.26A, 800V, SCR; CategoryAnalog mixed-signal IC Trigger device; File Size48KB，1 Pages; ManufacturerSEMIKRON; Websitehttp://www.semikron.com; Environmental Compliance

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SKKT20B/08D Overview

28.26A, 800V, SCR

SKKT20B/08D Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code	compliant
Shell connection	ISOLATED
Nominal circuit commutation break time	80 µs
Configuration	SERIES CONNECTED, 2 ELEMENTS
Critical rise rate of minimum off-state voltage	500 V/us
Maximum DC gate trigger current	150 mA
Maximum DC gate trigger voltage	3 V
Maximum holding current	200 mA
JESD-30 code	R-PUFM-X7
JESD-609 code	e3/e4
Number of components	2
Number of terminals	7
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	28.26 A
Maximum repetitive peak off-state leakage current	10000 µA
Off-state repetitive peak voltage	800 V
Repeated peak reverse voltage	800 V
surface mount	NO
Terminal surface	TIN/SILVER
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR
Base Number Matches	1

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SKKT20B/08D Related Products

	SKKT20B/08D	SKKT26/12D	SKKT72/06D	SKKT27/06D	SKKH131/12D	SKKQ31/06	SKKH26/12D
Description	28.26A, 800V, SCR	Silicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element, TO-240AA	Silicon Controlled Rectifier, 109.9A I(T)RMS, 70000mA I(T), 600V V(DRM), 600V V(RRM), 2 Element, TO-240AA	Silicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 600V V(DRM), 600V V(RRM), 2 Element, TO-240AA	Silicon Controlled Rectifier, 204.1A I(T)RMS, 130000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element	Silicon Controlled Rectifier, 21A I(T)RMS, 21000mA I(T), 600V V(DRM), 600V V(RRM), 2 Element	Silicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element
package instruction	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X5	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PXFM-X4	FLANGE MOUNT, R-PUFM-X4	FLANGE MOUNT, R-PUFM-X4
Reach Compliance Code	compliant	compliant	compliant	compliant	unknown	unknown	unknown
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Nominal circuit commutation break time	80 µs	80 µs	80 µs	80 µs	150 µs	80 µs	80 µs
Configuration	SERIES CONNECTED, 2 ELEMENTS	SERIES CONNECTED, 2 ELEMENTS	SERIES CONNECTED, 2 ELEMENTS	SERIES CONNECTED, 2 ELEMENTS	SINGLE WITH BUILT-IN SERIES DIODE	ANTI-PARALLEL, 2 ELEMENTS	SINGLE WITH BUILT-IN SERIES DIODE
Critical rise rate of minimum off-state voltage	500 V/us	500 V/us	500 V/us	500 V/us	500 V/us	500 V/us	500 V/us
Maximum DC gate trigger current	150 mA	150 mA	150 mA	150 mA	200 mA	150 mA	150 mA
Maximum DC gate trigger voltage	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Maximum holding current	200 mA	200 mA	250 mA	200 mA	400 mA	200 mA	200 mA
JESD-30 code	R-PUFM-X7	R-PUFM-X5	R-PUFM-X7	R-PUFM-X7	R-PXFM-X4	R-PUFM-X4	R-PUFM-X4
Number of components	2	2	2	2	1	2	1
Number of terminals	7	5	7	7	4	4	4
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	130 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	28.26 A	39.25 A	109.9 A	39.25 A	204.1 A	21 A	39.25 A
Maximum repetitive peak off-state leakage current	10000 µA	10000 µA	20000 µA	10000 µA	50000 µA	10000 µA	10000 µA
Off-state repetitive peak voltage	800 V	1200 V	600 V	600 V	1200 V	600 V	1200 V
Repeated peak reverse voltage	800 V	1200 V	600 V	600 V	1200 V	600 V	1200 V
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER	UPPER	UPPER	UNSPECIFIED	UPPER	UPPER
Trigger device type	SCR	SCR	SCR	SCR	SCR	SCR	SCR
Is it Rohs certified?	conform to	conform to	conform to	conform to	-	-	-
JESD-609 code	e3/e4	e2	e2	e2	-	-	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-	-
Terminal surface	TIN/SILVER	Tin/Silver (Sn/Ag)	Tin/Silver (Sn/Ag)	Tin/Silver (Sn/Ag)	-	-	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-	-
Quick connection description	-	2G	2G-2GR	2G-2GR	G-GR	2AK	G
Description of screw terminals	-	A-K-AK	A-K-AK	A-K-AK	A-K-AK	-	A-K-AK
Maximum leakage current	-	10 mA	20 mA	10 mA	50 mA	10 mA	10 mA
On-state non-repetitive peak current	-	470 A	1600 A	470 A	4700 A	320 A	470 A
Maximum on-state current	-	25000 A	70000 A	25000 A	130000 A	21000 A	25000 A
Maker	-	-	SEMIKRON	SEMIKRON	SEMIKRON	SEMIKRON	SEMIKRON

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