SKKH26/12D datasheet, PDF - EEWORLD Datasheet

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SKKH26/12D: DescriptionSilicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element; CategoryAnalog mixed-signal IC Trigger device; File Size48KB，1 Pages; ManufacturerSEMIKRON; Websitehttp://www.semikron.com

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SKKH26/12D Overview

Silicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element

SKKH26/12D Parametric

Parameter Name	Attribute value
Maker	SEMIKRON
package instruction	FLANGE MOUNT, R-PUFM-X4
Reach Compliance Code	unknown
Shell connection	ISOLATED
Nominal circuit commutation break time	80 µs
Configuration	SINGLE WITH BUILT-IN SERIES DIODE
Critical rise rate of minimum off-state voltage	500 V/us
Maximum DC gate trigger current	150 mA
Maximum DC gate trigger voltage	3 V
Quick connection description	G
Description of screw terminals	A-K-AK
Maximum holding current	200 mA
JESD-30 code	R-PUFM-X4
Maximum leakage current	10 mA
On-state non-repetitive peak current	470 A
Number of components	1
Number of terminals	4
Maximum on-state current	25000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Certification status	Not Qualified
Maximum rms on-state current	39.25 A
Maximum repetitive peak off-state leakage current	10000 µA
Off-state repetitive peak voltage	1200 V
Repeated peak reverse voltage	1200 V
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Trigger device type	SCR

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SKKH26/12D Related Products

	SKKH26/12D	SKKT20B/08D	SKKT26/12D	SKKT72/06D	SKKT27/06D	SKKH131/12D	SKKQ31/06
Description	Silicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element	28.26A, 800V, SCR	Silicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element, TO-240AA	Silicon Controlled Rectifier, 109.9A I(T)RMS, 70000mA I(T), 600V V(DRM), 600V V(RRM), 2 Element, TO-240AA	Silicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 600V V(DRM), 600V V(RRM), 2 Element, TO-240AA	Silicon Controlled Rectifier, 204.1A I(T)RMS, 130000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element	Silicon Controlled Rectifier, 21A I(T)RMS, 21000mA I(T), 600V V(DRM), 600V V(RRM), 2 Element
package instruction	FLANGE MOUNT, R-PUFM-X4	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X5	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PXFM-X4	FLANGE MOUNT, R-PUFM-X4
Reach Compliance Code	unknown	compliant	compliant	compliant	compliant	unknown	unknown
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Nominal circuit commutation break time	80 µs	80 µs	80 µs	80 µs	80 µs	150 µs	80 µs
Configuration	SINGLE WITH BUILT-IN SERIES DIODE	SERIES CONNECTED, 2 ELEMENTS	SERIES CONNECTED, 2 ELEMENTS	SERIES CONNECTED, 2 ELEMENTS	SERIES CONNECTED, 2 ELEMENTS	SINGLE WITH BUILT-IN SERIES DIODE	ANTI-PARALLEL, 2 ELEMENTS
Critical rise rate of minimum off-state voltage	500 V/us	500 V/us	500 V/us	500 V/us	500 V/us	500 V/us	500 V/us
Maximum DC gate trigger current	150 mA	150 mA	150 mA	150 mA	150 mA	200 mA	150 mA
Maximum DC gate trigger voltage	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Maximum holding current	200 mA	200 mA	200 mA	250 mA	200 mA	400 mA	200 mA
JESD-30 code	R-PUFM-X4	R-PUFM-X7	R-PUFM-X5	R-PUFM-X7	R-PUFM-X7	R-PXFM-X4	R-PUFM-X4
Number of components	1	2	2	2	2	1	2
Number of terminals	4	7	5	7	7	4	4
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	130 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	39.25 A	28.26 A	39.25 A	109.9 A	39.25 A	204.1 A	21 A
Maximum repetitive peak off-state leakage current	10000 µA	10000 µA	10000 µA	20000 µA	10000 µA	50000 µA	10000 µA
Off-state repetitive peak voltage	1200 V	800 V	1200 V	600 V	600 V	1200 V	600 V
Repeated peak reverse voltage	1200 V	800 V	1200 V	600 V	600 V	1200 V	600 V
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER	UNSPECIFIED	UPPER
Trigger device type	SCR	SCR	SCR	SCR	SCR	SCR	SCR
Maker	SEMIKRON	-	-	SEMIKRON	SEMIKRON	SEMIKRON	SEMIKRON
Quick connection description	G	-	2G	2G-2GR	2G-2GR	G-GR	2AK
Description of screw terminals	A-K-AK	-	A-K-AK	A-K-AK	A-K-AK	A-K-AK	-
Maximum leakage current	10 mA	-	10 mA	20 mA	10 mA	50 mA	10 mA
On-state non-repetitive peak current	470 A	-	470 A	1600 A	470 A	4700 A	320 A
Maximum on-state current	25000 A	-	25000 A	70000 A	25000 A	130000 A	21000 A
Is it Rohs certified?	-	conform to	conform to	conform to	conform to	-	-
JESD-609 code	-	e3/e4	e2	e2	e2	-	-
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-
Terminal surface	-	TIN/SILVER	Tin/Silver (Sn/Ag)	Tin/Silver (Sn/Ag)	Tin/Silver (Sn/Ag)	-	-
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-

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