2SD1421
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
UPAK
1
3
2
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SD1421
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
*
1
P
C
*
2
Tj
Tstg
Ratings
180
160
5
1.5
3
1
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Notes: 1. PW
≤
10 ms, Duty cycle
≤
20%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
180
160
5
—
60
30
—
—
Typ
—
—
—
—
—
—
—
—
Max
—
—
—
10
200
—
1.0
0.9
V
V
Unit
V
V
V
µA
Test conditions
I
C
= 1 mA, I
E
= 0
I
C
= 10 mA, R
BE
=
∞
I
E
= 1 mA, I
C
= 0
V
CB
= 160 V, I
E
= 0
V
CE
= 5 V, I
C
= 0.15 A
V
CE
= 5 V, I
C
= 0.5 A
I
C
= 0.5 A, I
B
= 50 mA, Pulse
V
CE
= 5 V, I
C
= 0.15 A, Pulse
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
V
(BR)EBO
I
CBO
h
FE1
*
1
h
FE2
Collector to emitter saturation
voltage
Base to emitter voltage
Note:
Mark
h
FE1
ED
60 to 120
V
CE(sat)
V
BE
EE
100 to 200
1. The 2SD1421 is grouped by h
FE1
as follows.
2
2SD1421
Maximum Collector Dissipation Curve
1.2
Collector Power Dissipation Pc (W)
(on the alumina ceramic board)
Collector Current I
C
(A)
Typical Output Characteristics
1.0
0
5.
0
4.
3.5 0
3.
2.5
Pulse
0.8
0.8
0.6
2.0
1.5
0.4
1.0
0.4
0.2
0.5 mA
I
B
= 0
0
50
100
150
Ambient Temperature Ta (°C)
0
10
20
30
40
50
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics
500
DC Current Transfer Ratio h
FE
Collector Current I
C
(mA)
200
100
V
CE
= 5 V
Pulse
300
250
200
150
100
50
0
1
DC Current Transfer Ratio vs.
Collector Current
V
CE
= 5 V
Pulse
10
5
2
1
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage V
BE
(V)
25
–25
20
Ta = 75
°
C
50
3
10 30 100 300 1,000 3,000
Collector Current I
C
(mA)
3
2SD1421
Collector to Emitter Saturation Voltage vs.
Collector Current
1.2
I
C
= 10 I
B
Pulse
1.0
0.8
0.6
0.4
0.2
0
1
3
10
30
100 300 1,000
Collector Current I
C
(mA)
Gain Bandwidth Product vs.
Collector Current
240
Gain Bandwidth Product f
T
(MHz)
V
CE
= 5 V
200
160
120
80
40
0
10
Collector to Emitter Saturation Voltage
V
CE (sat)
(V)
30
100
300
Collector Current I
C
(mA)
1,000
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
200
100
50
f = 1 MHz
I
E
= 0
20
10
5
2
1
2
5
10
20
50 100
Collector to Base Voltage V
CB
(V)
4
Unit: mm
4.5
±
0.1
0.4
1.8 Max
φ
1
1.5
±
0.1
0.44 Max
(2.5)
(1.5)
1.5 1.5
3.0
0.8 Min
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.4)
0.53 Max
0.48 Max
2.5
±
0.1
4.25 Max
UPAK
—
Conforms
0.050 g
(0.2)
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