EEWORLDEEWORLDEEWORLD

Part Number

Search

BC847S-C

Description
Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size64KB,1 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BC847S-C Overview

Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon

BC847S-C Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G6
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage45 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)420
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
VCEsat-Max0.6 V
Base Number Matches1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 129  461  1487  829  1423  3  10  30  17  29 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号