CS218I-30PLEADFREE datasheet, PDF

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CS218I-30PLEADFREE: DescriptionSilicon Controlled Rectifier, 30A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-218; CategoryAnalog mixed-signal IC Trigger device; File Size437KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CS218I-30PLEADFREE Overview

Silicon Controlled Rectifier, 30A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-218

CS218I-30PLEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant
Shell connection	ISOLATED
Configuration	SINGLE
Maximum DC gate trigger current	50 mA
JEDEC-95 code	TO-218
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum rms on-state current	30 A
Off-state repetitive peak voltage	1000 V
Repeated peak reverse voltage	1000 V
surface mount	NO
Terminal surface	MATTE TIN (315)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	10
Trigger device type	SCR
Base Number Matches	1

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CS218I-30B CS218I-30N

CS218I-30D CS218I-30P

CS218I-30M CS218I-30PB

ISOLATED TAB

SILICON CONTROLLED RECTIFIERS

30 AMP, 200 THRU 1200 VOLT

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CS218I-30B series

types are epoxy molded SCRs designed for sensing

circuit and control system applications. This device is

mounted in a TO-218 case with an isolated mounting

tab.

MARKING: FULL PART NUMBER

TO-218 THYRISTOR CASE

MAXIMUM RATINGS:

(TC=25°C unless otherwise noted)

SYMBOL

-30B -30D

Peak Repetitive Off-State Voltage

VDRM, VRRM 200 400

RMS On-State Current (TC=85°C)

IT(RMS)

Peak One Cycle Surge Current, t=10ms

t Value for Fusing, t=10ms

Peak Gate Power Dissipation, tp=10μs

Average Gate Power Dissipation

Peak Forward Gate Current, tp=10μs

Peak Forward Gate Voltage, tp=10μs

Peak Reverse Gate Voltage

Critical Rate of Rise of On-State Current

Operating Junction Temperature

Storage Temperature

Thermal Resistance

Isolation Voltage

ELECTRICAL

SYMBOL

IDRM, IRRM

IGT

VGT

VTM

dv/dt

ITSM

PGM

PG(AV)

IFGM

VFGM

VRGM

di/dt

Tstg

VISO

CS218I

-30M -30N -30P -30PB UNITS

600

800 1000 1200

400

800

1.0

4.0

5.0

100

-40 to +125

-40 to +150

1.1

2500

A/μs

°C

°C/W

V(RMS)

MAX

6.0

1.5

2.1

500

250

UNITS

μA

V/μs

CHARACTERISTICS:

(TC=25°C unless otherwise noted)

TEST CONDITIONS

MIN

Rated VDRM, VRRM

Rated VDRM, VRRM, TC=125°C

VD=12V, RL=33Ω

IT=500mA

VD=12V, RL=33Ω

ITM=60A, tp=380ms

VD=⅔Rated VDRM,

RGK=

∞,

TC=125°C (200V thru 800V)

VD=⅔Rated VDRM,

RGK=

∞,

TC=125°C (1000V, 1200V)

R2 (4-November 2013)

CS218I-30PLEADFREE Related Products

	CS218I-30PLEADFREE	CS218I-30PBLEADFREE	CS218I-30MLEADFREE	CS218I-30DLEADFREE	CS218I-30BLEADFREE	CS218I-30NLEADFREE
Description	Silicon Controlled Rectifier, 30A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-218	Silicon Controlled Rectifier, 30A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-218	Silicon Controlled Rectifier, 30A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-218	Silicon Controlled Rectifier, 30A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-218	Silicon Controlled Rectifier, 30A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-218	Silicon Controlled Rectifier, 30A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-218
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum DC gate trigger current	50 mA	50 mA	50 mA	50 mA	50 mA	50 mA
JEDEC-95 code	TO-218	TO-218	TO-218	TO-218	TO-218	TO-218
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e3	e3	e3	e3	e3	e3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	30 A	30 A	30 A	30 A	30 A	30 A
Off-state repetitive peak voltage	1000 V	1200 V	600 V	400 V	200 V	800 V
Repeated peak reverse voltage	1000 V	1200 V	600 V	400 V	200 V	800 V
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	10	10	10	10	10	10
Trigger device type	SCR	SCR	SCR	SCR	SCR	SCR
Maker	-	-	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor

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