HYBRID I.C.s "Hi-Net"
Diode Arrays
High-speed switching diode arrays and high voltage-withstand diode arrays are of NICHICON's
standard series. They are combined to be conveniently used for both binary and decimal
systems. High-speed series is ideal for computer peripherals, control boards and general
electronic appliances. Besides, high voltage-withstand series is ideal for plasma displays.
relay surge-preventive circuits.
Both of these series are in stock for prompt delivery. Any special requirements with customer's
particular circuits will be also welcome. Please consult us for the details.
(Samples for the items listed below are not always available on stock. Please contact our sales office for details together with
your specific requirements.)
High-speed switching diode array series
Absolute maximum ratings
Items
Peak reverse voltage
DC reverse voltage
Surge current (1µs)
Peak forward current
Average rectified current
Storage temperature
100mA for simultaneous energizing.
High voltage-withstand series
Absolute maximum ratings
Ratings
40V
40V
4.0A
300mA
100mA
—25
~
+
85
°C
Items
Peak reverse voltage
Reverse DC voltage
Surge current (1sec.)
Peak forward current
Average rectified current
Storage temperature
Symbol
V
RM
V
R
I
S
I
FM
I
0
T
stg
Ratings
220V
200V
1A
600mA
200mA
—25
~
+
85
°C
Symbol
V
RM
V
R
I
FSM
I
FM
I
0
T
stg
Maximum Current value applicable to each diode.
Ta : + 25
°C
Conditions
V
R
=40V
I
F
=10mA
I
F
=50mA
I
F
=100mA
I
F
=10mA, V
R
=6V
Min.
—
—
—
—
—
No.of
Pins
n
1
14
9
3.5
5
2
1
2
3
Maximum Current value applicable to each diode.
Electrical characteristics
Items
Reverse current
Forward voltage
Forward voltage
Forward voltage
Reverse recovery time
Symbol
I
R
V
F1
V
F2
V
F3
t
rr
Rating
Typ.
—
0.7
0.79
0.85
—
Electrical characteristics
Items
Reverse current
Forward voltage
Reverse voltage
Time required for recovery
from reverse voltage or current
Symbol
I
R
V
F
V
R
t
rr
Conditions
V
R
=110V
I
F
=50mA
I
R
=100µA
I
F
=I
R
=30mA
R
L
=100Ω
Min.
—
—
220
—
Rating
Typ.
—
—
—
—
Ta : + 25
°C
Unit
Max.
1.0
µA
1.3 V
—
V
100 ns
Max.
0.5
1.0
1.0
1.2
4.0
Unit
µA
V
V
V
ns
Series List
Code
Type
Number of
diodes
Common
electrode
Cathode
4
ZHMA0424 MA424
ZHMA0425 MA425
8
ZHMA0426 MA426
ZHMA0427 MA427
10
ZHMA0428 MA428
ZHMA0429 MA429
ZHMA0430 MA430
ZHMA0431 MA431
6
ZHMA0432 MA432
Anode
5
Anode
Anode
Anode
Dimensions (m/m Max.)
W
H
T
Circuit diagram
Series List
Code
ZHLA0650
1
Type
HD-4K
Number of Common
diodes
electrode
Cathode
4
Dimensions (m/m Max.)
W
H
T
No.of
Pins
n
1
Circuit diagram
ZHMA0423 MA423
1
14
Anode
9
3
5
2
1
2
3
ZHLA0651
n
HD-4A
n
Cathode
24
9
3.5
9
1
2
2
ZHLA0652
HD-8K
8
Cathode
24
Anode
9
3
9
1
2
ZHLA0653
HD-8A
2
1
29
9
3
11
2
3
Cathode
29
9
3.5
11
1
2
9
3.5
10
3
3
3
ZHLA0654 HD-10K
10
1
2
3
Cathode
1
2
3
n
n
ZHLA0655 HD-10A
Anode
Isolated
27
ZHLA0656
HD-4S
4
Isolated 21.5
9
3
8
3
3
4
Isolated 21.5
Cathode
19
9
3.5
8
ZHLA0657
HD-5S
5
Isolated
27
9
3
10
n
-1
n
1
9
3.5
7
n
-1
Drawing
n
W
T
2
MARKING
0.5
H
0.25
3MIN
Diode Mini-Arrays
Height••••••5mm Max.
The mounting height of electronic device can be made
substantially low-profile and compact.
1 2 3
n
2.54
±
0.2
Thickness••••••2.5mm Max.
Diode arrays can be placed in a row with 2.54mm
pitch, and high density mounting is available at a rate
of one diode per 0.1 sq. inch.
Electrical characteristics
Items
Reverse current
Forward voltage
Forward voltage
Forward voltage
Reverse recovery time
Symbol
I
R
V
F1
V
F2
V
F3
t
rr
Conditions
V
R
=35V
I
F
=10mA
I
F
=50mA
I
F
=100mA
I
F
=10mA, V
R
=6V
W=24.0
MAX.
L=4.5±1.0 H=5.0MAX.
Ta: + 25
°C
Min.
—
—
—
—
—
Rating
Typ.
—
0.75
0.90
0.95
—
Max.
0.5
1.0
1.1
1.2
4.0
Unit
µA
V
V
V
ns
Circuit diagram
LA1460 (Code ZHLA 1460)
LA1461 (Code ZHLA 1461)
Drawing
T=2.5
MAX.
0.5
1 2
3
4
5
6 7
8
9
0.25
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
P
P=2.54±0.2
Any particular specifications are also available upon request.
CAT.8100P
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