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CMPT751LEADFREE

Description
Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size123KB,2 Pages
ManufacturerCentral Semiconductor
Environmental Compliance  
Download Datasheet Parametric View All

CMPT751LEADFREE Overview

Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

CMPT751LEADFREE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN (315)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)75 MHz
Base Number Matches1
E
PR
LIM
RY
INA
CMPT751
SURFACE MOUNT
PNP HIGH CURRENT
SILICON TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT751
type is a high current PNP Silicon Transistor,
epoxy molded in a space saving Power SOT-23
surface mount package, designed for high current
applications.
MARKING CODE: C751
SOT-23 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
UNITS
V
V
V
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C)
SYMBOL
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
fT
P
E
R
VCB=80V
VEB=4.0V
IC=100µA
IC=10mA
IC=2.0A,
IC=1.0A,
TEST CONDITIONS
I
L
IN
M
TJ,Tstg
Θ
JA
80
60
5.0
Y
R
A
-65 to +150
357
MAX
100
100
150
200
400
1.2
1.0
80
60
5.0
2.0
350
MIN
UNITS
nA
nA
V
V
V
mV
mV
mV
V
V
IE=10µA
IC=0.5A, IB=50mA
IC=1.0A, IB=100mA
IB=200mA
IB=100mA
VCE=2.0V, IC=1.0A
VCE=2.0V, IC=50mA
VCE=2.0V, IC=500mA
VCE=2.0V, IC=1.0A
VCE=2.0V, IC=2.0A
VCE=5.0V, IC=50mA, f=100MHz
75
100
75
40
75
MHz
300
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