TF222B4 datasheet, PDF - EEWORLD Datasheet

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TF222B4: DescriptionSmall Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, ULTRA SMALL, SSFP, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size47KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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TF222B4 Overview

Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, ULTRA SMALL, SSFP, 3 PIN

TF222B4 Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-F3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Maximum drain current (ID)	0.001 A
FET technology	JUNCTION
JESD-30 code	R-PDSO-F3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.1 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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Ordering number : ENN7281B

TF222

N-channel Silicon Junction FET

TF222

Features

•

Electret Condenser Microphone

Applications

Ultrasmall package facilitates miniaturization in end products.

Especially suited for use in electret condenser microphone for audio equipments and telephones.

Excellent voltage characteristics.

Excellent transient characteristics.

Adoption of FBET process.

Specifications

Absolute Maximum Ratings

at Ta=25°C

Parameter

Gate-to-Drain Voltage

Gate Current

Drain Current

Allowable Power Dissipation

Junction Temperature

Storage Temperature

Symbol

VGDO

Tstg

Conditions

Ratings

--20

100

150

--55 to +150

Unit

°C

Electrical Characteristics

at Ta=25°C

Parameter

Gate-to-Drain Breakdown Voltage

Cutoff Voltage

Drain Current

Forward Transfer Admittance

Input Capacitance

Reverse Transfer Capacitance

Voltage Gain

Reduced Voltage Characteristics

Frequency Characteristics

Symbol

V(BR)GDO

VGS(off)

IDSS



yfs



Ciss

Crss

∆G

IG=--100µA

VDS=2V, ID=1µA

VDS=2V, VGS=0V

VDS=2V, VGS=0V, f=1kHz

VDS=2V, VGS=0V, f=1MHz

f=1kHz, VIN=10mV

f=1kHz, VIN=10mV, VCC=2→1.5V

f=1kHz to 110Hz

Conditions

Ratings

min

--20

--0.1

140*

0.5

5.0

1.1

--2.0

--0.6

--2.0

--1.0

350*

typ

max

Unit

µA

[Ta=25˚C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.]

Continued on next page.

* : The TF222 is classified by IDSS as follows : (unit :

µA)

Rank

IDSS

140 to 240

210 to 350

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

81005GB MS IM / 90503 TS IM / O3002 TS IM TA-3621 No.7281-1/4

TF222

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer’s

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer’s products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be exported without obtaining the export license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of August, 2005. Specifications and information herein are subject

to change without notice.

PS No.7281-4/4

TF222B4 Related Products

	TF222B4	TF222B5
Description	Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, ULTRA SMALL, SSFP, 3 PIN	Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, ULTRA SMALL, SSFP, 3 PIN
package instruction	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Maximum drain current (ID)	0.001 A	0.001 A
FET technology	JUNCTION	JUNCTION
JESD-30 code	R-PDSO-F3	R-PDSO-F3
Number of components	1	1
Number of terminals	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.1 W	0.1 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	FLAT	FLAT
Terminal location	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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