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TF222B5

Description
Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, ULTRA SMALL, SSFP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size47KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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TF222B5 Overview

Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, ULTRA SMALL, SSFP, 3 PIN

TF222B5 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
Maximum drain current (ID)0.001 A
FET technologyJUNCTION
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.1 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
Ordering number : ENN7281B
TF222
N-channel Silicon Junction FET
TF222
Features
Electret Condenser Microphone
Applications
Ultrasmall package facilitates miniaturization in end products.
Especially suited for use in electret condenser microphone for audio equipments and telephones.
Excellent voltage characteristics.
Excellent transient characteristics.
Adoption of FBET process.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VGDO
IG
ID
PD
Tj
Tstg
Conditions
Ratings
--20
10
1
100
150
--55 to +150
Unit
V
mA
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Voltage Gain
Reduced Voltage Characteristics
Frequency Characteristics
Symbol
V(BR)GDO
VGS(off)
IDSS
yfs
Ciss
Crss
GV
∆G
VV
∆G
Vf
IG=--100µA
VDS=2V, ID=1µA
VDS=2V, VGS=0V
VDS=2V, VGS=0V, f=1kHz
VDS=2V, VGS=0V, f=1MHz
VDS=2V, VGS=0V, f=1MHz
f=1kHz, VIN=10mV
f=1kHz, VIN=10mV, VCC=2→1.5V
f=1kHz to 110Hz
Conditions
Ratings
min
--20
--0.1
140*
0.5
5.0
1.1
--2.0
--0.6
--2.0
--1.0
--1.0
350*
typ
max
Unit
V
V
µA
mS
pF
pF
dB
dB
dB
[Ta=25˚C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.]
Continued on next page.
* : The TF222 is classified by IDSS as follows : (unit :
µA)
Rank
B4
B5
IDSS
140 to 240
210 to 350
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
81005GB MS IM / 90503 TS IM / O3002 TS IM TA-3621 No.7281-1/4

TF222B5 Related Products

TF222B5 TF222B4
Description Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, ULTRA SMALL, SSFP, 3 PIN Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, ULTRA SMALL, SSFP, 3 PIN
package instruction SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3
Contacts 3 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR SINGLE WITH BUILT-IN DIODE AND RESISTOR
Maximum drain current (ID) 0.001 A 0.001 A
FET technology JUNCTION JUNCTION
JESD-30 code R-PDSO-F3 R-PDSO-F3
Number of components 1 1
Number of terminals 3 3
Operating mode DEPLETION MODE DEPLETION MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.1 W 0.1 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Base Number Matches 1 1

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