DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2371/2SK2372
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
• Low On-Resistance
20.0 ± 0.2
1.0
15.7 MAX.
4
3.2 ± 0.2
4.7 MAX.
1.5
7.0
2SK2368: R
DS(ON)
= 0.27
Ω
(V
GS
= 13 V, I
D
= 10 A)
• Low C
iss
C
iss
= 3600 pF TYP.
• High Avalanche Capability Ratings
1
3.0 ± 0.2
2
3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C)
Drain to Source Voltage (2SK2371/2SK2372) V
DSS
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
C
= 25
°C)
Total Power Dissipation (T
a
= 25
°C)
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
* PW
≤
10
µ
s, Duty Cycle
≤
1 %
** Starting T
ch
= 25
°C,
R
G
= 25
Ω,
V
GS
= 20 V
→
0
19 MIN.
450/500
±30
±25
±100
160
3.0
150
–55 ~ +150
25
446
V
V
A
A
W
W
°C
°C
A
mJ
2.2 ± 0.2
5.45
1.0 ± 0.2
5.45
4.5 ± 0.2
2SK2367: R
DS(ON)
= 0.25
Ω
(V
GS
= 13 V, I
D
= 10 A)
6.0
0.6 ± 0.1
2.8 ± 0.1
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
MP-88
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Drain
Gate
Body
Diode
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device is actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Source
Document No. TC-2505
(O.D. No. TC-8064
Date Published January 1995 P
Printed in Japan
©
1995
2SK2371/2SK2372
ELECTRICAL CHARACTERISTICS (T
A
= 25
°C)
CHARACTERISTIC
Drain to Source On-Resistance
SYMBOL
R
DS(on)
MIN.
TYP.
0.2
0.22
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS(off)
y
fs
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
3600
700
50
40
70
160
60
95
20
40
1.0
500
4.5
2.5
8.0
100
±100
MAX.
0.25
0.27
3.5
V
S
UNIT
Ω
TEST CONDITION
V
GS
= 10 V
I
D
= 13 A
2SK2371
2SK2372
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 13 A
V
DS
= V
DSS
, V
GS
= 0
V
GS
=
±
30 V, V
DS
= 0
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 13 A
V
GS
= 10 V
V
DD
= 150 V
R
G
= 10
Ω
RL = 11.5
Ω
I
D
= 25 A
V
DD
= 400 V
V
GS
= 10 V
I
F
= 25 A, V
GS
= 0
I
F
= 25 A, V
GS
= 0
di/dt = 50 A/
µ
S
µ
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µ
C
Test Circuit 1 Avalanche Capability
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20-0 V
50
Ω
Test Circuit 2 Switching Time
D.U.T.
L
V
DD
PG.
R
G
R
G
= 10
Ω
R
L
V
DD
V
GS
Wave
Form
V
GS
0
10 %
V
GS (on)
90 %
I
D
90 %
90 %
I
D
0
10 %
t
d (on)
t
on
t
r
t
d (off)
t
off
10 %
t
f
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
t
t = 1
US
Duty Cycle
≤
1%
I
D
Wave
Form
Starting T
ch
Test Circuit 3 Gate Charge
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
2SK2371/2SK2372
TYPICAL CHARACTERISTICS (T
A
= 25
°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
100
P
T
- Total Power Dissipation - (W)
210
180
150
120
90
60
30
0
20
40
60
80
100 120 140 160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
80
60
40
20
0
20
40
60
80
100 120 140 160
T
C
- Case Temperature - (°C)
FORWARD BIAS SAFE OPERATING AREA
1 000
ited
Lim )
R
10 V
S
=
( V
G
on)
DS (
T
C
- Case Temperature - (°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
20
V
GS
= 10 V
I
D
- Drain Current - (A)
15
8V
6V
Pulsed
T
A
= 25 °C
Single Pulse
I
D (pulse)
P
W
=1
10
0
µ
0
µ
s
s
1m
s
10
ms
I
D
- Drain Current - (A)
100
I
D (DC)
10
I
D (DC)
Po
we
10
rD
iss
ipa
1.0
tio
nL
0.1
1
10
itd
2SK2371
2SK2372
100
im
5
5V
1 000
0
5
10
15
V
DS
- Drain to Source Voltage - (V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
V
DS
- Drain to Source Voltage - (V)
I
D
- Drain Current - (A)
10
1
T
ch
= 125 °C
75 °C
25 °C
–25 °C
V
DS
= 10 V
Pulsed
0.1
0
5
10
15
V
GS
- Gate to Source Voltage - (V)
3
2SK2371/2SK2372
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th (t)
- Transient Thermal Resistance - (°C/W)
1000
100
10
1.0
0.1
0.01
T
c
= 25 °C
Single Pulse
0.001
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
R
th (ch-c)
= 0.78 C/W
R
th (ch-a)
= 41.7 °C/W
PW - Pulse Width - (s)
R
DS (on)
- Drain to Source On-State Resistance - (Ω)
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
T
ch
= –25 °C
25 °C
75 °C
125°C
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.5
Pulsed
yfs
- Forward Transfer Admittance - (S)
1.0
I
D
= 25 A
13 A
6A
1.0
0.5
0.1
V
DS
= 10 V
Pulsed
1.0
10
100
1000
0
5
10
15
20
I
D
- Drain Current - (A)
R
DS (on)
- Drain to Source On-State Resistance - (Ω)
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
1.5
V
GS
- Gate to Source Voltage - (V)
GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.0
0.5
V
GS
= 10 V
0
1.0
10
100
Pulsed
1000
V
GS (off)
- Gate to Source Cutoff Voltage - V
–50
0
50
100
150
I
D
- Drain Current - (A)
T
ch
- Channel Temperature - (°C)
4
2SK2371/2SK2372
R
DS (on)
- Drain to Source On-State Resistance - (A)
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.0
I
SD
- Diode Forward Current - (A)
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
V
GS
= 10 V
0.5
I
D
= 25 A
13 A
1.0
V
GS
= 0 V
0.1
0
–50
0
50
100
150
0.01
0
0.5
1.0
Pulsed
1.5
T
ch
- Channel Temperature - (C)
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
SD
- Source to Drain Voltage - (V)
SWITCHING CHARACTERISTICS
C
iss
t
d (on),
t
r
, t
d (off),
t
f
- Switching Time - (ns)
1000
t
r
t
d (off)
100
t
d
10
V
DD
= 150 V
V
GS
= 10 V
R
in
= 10
Ω
10
100
(on)
10000
C
iss
, C
oss
, C
rss
- Capacitance - pF
1 000
C
oss
100
C
rss
10
V
GS
= 0 V
f = 1 MHz
0.1
1.0
10
100
1000
V
DS
- Drain to Source Voltage - (V)
t
f
1.0
1.0
0.1
1.0
I
D
- Drain Current - (A)
REVERSE RECOVERY TIME vs.
REVERSE DRAIN CURRENT
V
DS
- Drain to Source Voltage - (V)
t
W
- Reverse Recovery Time - (ns)
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
500
20
18
400
V
DD
= 400 V
250 V
125 V
V
GS
200
16
14
12
10
8
6
100
V
DS
4
2
60
80
100
0
120
V
GS
- Gate to Source Voltage - (V)
600
500
400
300
200
100
0.1
1.0
di/dt = 50 A/
µ
s
V
GS
= 0
10
100
I
F
- Forward Current - (A)
300
0
20
40
Q
g
- Gate Charge (nC)
5
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