PDM41252LA12PI datasheet, PDF - EEWORLD Datasheet

PDM41252LA12PI: DescriptionStandard SRAM, 64KX4, 12ns, CMOS, PDIP28; Categorystorage storage; File Size370KB，8 Pages; ManufacturerParadigm Technology Inc

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PDM41252LA12PI Overview

Standard SRAM, 64KX4, 12ns, CMOS, PDIP28

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	DIP, DIP28,.3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	12 ns
Other features	HIGH IMPEDENCE OUTPUTS DURING WRITE MODE
I/O type	SEPARATE
JESD-30 code	R-PDIP-T28
JESD-609 code	e0
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	28
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	64KX4
Output characteristics	3-STATE
Exportable	NO
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.0005 A
Minimum standby current	2 V
Maximum slew rate	0.17 mA
Maximum supply voltage (Vsup)	5.25 V
Minimum supply voltage (Vsup)	4.75 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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