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HGTP1N120CND

Description
Insulated Gate Bipolar Transistor, 1A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size400KB,11 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
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HGTP1N120CND Overview

Insulated Gate Bipolar Transistor, 1A I(C), 1200V V(BR)CES, N-Channel, TO-220AB

HGTP1N120CND Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW CONDUCTION LOSS
Maximum collector current (IC)1 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Base Number Matches1

HGTP1N120CND Related Products

HGTP1N120CND HGT1S1N120CNDS9A HGT1S1N120CNDS
Description Insulated Gate Bipolar Transistor, 1A I(C), 1200V V(BR)CES, N-Channel, TO-220AB Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-263AB Insulated Gate Bipolar Transistor, 1A I(C), 1200V V(BR)CES, N-Channel, TO-263AB
package instruction FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown unknown unknown
Other features LOW CONDUCTION LOSS LOW CONDUCTION LOSS, HYPER FAST RECOVERY LOW CONDUCTION LOSS
Maximum collector current (IC) 1 A 6.2 A 1 A
Collector-emitter maximum voltage 1200 V 1200 V 1200 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
JEDEC-95 code TO-220AB TO-263AB TO-263AB
JESD-30 code R-PSFM-T3 R-PSSO-G2 R-PSSO-G2
Number of components 1 1 1
Number of terminals 3 2 2
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO YES YES
Terminal form THROUGH-HOLE GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE
transistor applications POWER CONTROL MOTOR CONTROL POWER CONTROL
Transistor component materials SILICON SILICON SILICON
ECCN code EAR99 - EAR99
Maker - Harris Harris
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